mt48h16m16lfbf Micron Semiconductor Products, mt48h16m16lfbf Datasheet
mt48h16m16lfbf
Manufacturer Part Number
mt48h16m16lfbf
Description
256mb X16, X32 Mobile Sdram At Addendum Features
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT48H16M16LFBF.pdf
(3 pages)
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Automotive Temperature Addendum
MT48H16M16LF – 4 Meg x 16 x 4 banks
MT48H8M32LF – 2 Meg x 32 x 4 banks
For the latest data sheet, refer to Micron’s Web site:
Features
• Automotive temperature (AT) range
• Fully synchronous; all signals registered on positive
• V
• Internal, pipelined operation; column address can
• 4 internal banks for concurrent operation
• Programmable burst lengths (BL): 1, 2, 4, 8, or
• Concurrent auto precharge supported
• Auto refresh mode
• LVTTL-compatible inputs and outputs
• Deep power-down (DPD)
• Selectable output drive (DS)
• 32ms refresh period (8,192 rows)
• Self refresh is not supported
Notes: 1. For continuous page burst, contact factory
Notes: 1. Specified as ambient temperature (T
PDF: 09005aef829c53e1/Source: 09005aef829c532a
Y36M Mobile AT Addendum.fm - Rev B 3/08 EN
Options
• V
• Configuration
• Plastic package
• Timing – cycle time
• Power
• Operating temperature
• Design revision
edge of system clock
be changed every clock cycle
continuous page
– 1.8V/1.8V
– 16 Meg x 16 (4 Meg x 16 x 4 banks)
– 8 Meg x 32 (2 Meg x 32 x 4 banks)
– 54-ball VFBGA (8mm x 9mm)
– 90-ball VFBGA (8mm x 13mm)
– 7.5ns @ CL = 3
– 8ns @ CL = 3
– See the 256Mb data sheet
– Low I
– Automotive (–40°C to +105°C)
DD
DD
/V
/V
DD
DD
for availability.
DD
Q = 1.70–1.95V
Q
2P/I
Products and specifications discussed herein are subject to change by Micron without notice.
DD
1
7 (not supported)
1
Marking
16M16
8M32
-75
BF
B5
AT
:G
-8
H
A
).
www.micron.com
256Mb: x16, x32 Mobile SDRAM AT Addendum
1
Table 1:
Table 2:
Configuration
Refresh count
Row address
Bank address
Column address
Speed
Grade
Parameter
-75
-8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Addressing
Key Timing Parameters
CL = CAS (READ) latency
Clock Rate (MHz)
CL = 2
104
100
4 Meg x 16 x 4
16 Meg x 16
4 (BA0, BA1)
8K (A0–A12)
512 (A0–A8)
banks
8K
CL = 3
133
125
©2007 Micron Technology, Inc. All rights reserved.
CL = 2
6ns
7ns
Access Time
2 Meg x 32 x 4
4K (A0–A11)
4 (BA0, BA1)
8 Meg x 32
512 (A0–A8)
banks
Features
8K
CL = 3
6ns
7ns
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mt48h16m16lfbf Summary of contents
Page 1
Automotive Temperature Addendum MT48H16M16LF – 4 Meg banks MT48H8M32LF – 2 Meg banks For the latest data sheet, refer to Micron’s Web site: Features • Automotive temperature (AT) range • Fully synchronous; ...
Page 2
General Description The information in this addendum is specific to the 256Mb, 16 Meg x 16 and 8 Meg x 32 Mobile SDRAM VFBGA-packaged part. For detailed specification informa- tion, refer to the 256Mb data sheet available on Micron’s Web ...
Page 3
Table 4: I Specifications and Conditions (x32) DD See the 256Mb data sheet for notes that apply to the entire table and for notes that are specific to each parameter/condition Parameter/Condition Standby current: Active mode; CKE = HIGH; CS# = ...