mt45w2mw16pga Micron Semiconductor Products, mt45w2mw16pga Datasheet - Page 20

• Manufacturer Part Number: mt45w2mw16pga
• Description: 32mb 2 Meg X 16 Async/page Cellularram 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Figure 15:
Table 9:
PDF: 09005aef82832fa7 / Source: 09005aef82832f97
32mb_asyncpage_cr1_0_p24z_2.fm - Rev. B 5/07 EN
Parameter
Address access time
Page access time
LB#/UB# access time
LB#/UB# disable to High-Z output
LB#/UB# enable to Low-Z output
Maximum CE# pulse width
Chip select access time
Chip disable to High-Z output
Chip enable to Low-Z output
Output enable to valid output
Output hold from address change
Output disable to High-Z output
Output enable to Low-Z output
Page cycle time
Read cycle time
READ Cycle Timing Requirements
Output Load Circuit
Notes:
1. High-Z to Low-Z timings are tested with the circuit shown in Figure 15 on page 20. The Low-
2. Low-Z to High-Z timings are tested with the circuit shown in Figure 15 on page 20. The
3. Page mode enabled only.
DUT
Z timings measure a 100mV transition away from the High-Z (V
V
High-Z timings measure a 100mV transition from either V
OH
or V
OL
Test Point
.
32Mb: 2 Meg x 16 Async/Page CellularRAM 1.0 Memory
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AA
APA
BA
BHZ
BLZ
CEM
CO
HZ
LZ
OE
OH
OHZ
OLZ
PC
RC
30pF
50Ω
20
VccQ/2
Min
10
10
20
70
5
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
–70
Max
70
20
70
70
20
8
8
8
8
Electrical Characteristics
OH
or V
CC
©2007 Micron Technology, Inc. All rights reserved.
OL
Q/2) level toward either
toward V
Units
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
Q/2.
Notes
2
1
3
2
1
2
1