is61lv10248 Integrated Silicon Solution, Inc., is61lv10248 Datasheet - Page 4

• Manufacturer Part Number: is61lv10248
• Description: 1m X 8 High-speed Cmos Static Ram - Integrated Silicon Solution, Inc
• Manufacturer: Integrated Silicon Solution, Inc.

IS61LV10248
4
DC ELECTRICAL CHARACTERISTICS
Note:
1. V
POWER SUPPLY CHARACTERISTICS
Note:
1. At f = f
Symbol Parameter
I
I
I
CC
SB
SB
Symbol Parameter
V
V
V
V
I
I
LI
LO
1
2
IL
OH
OL
IH
IL
= –3.0V for pulse width less than 10 ns.
MAX
V
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
DD
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Dynamic Operating
(1)
Test Conditions
V
I
V
V
CE ≥ V
V
CE ≥ V
V
V
OUT
DD
DD
IN
DD
IN
IN
= V
≥ V
= Max.,
= Max.,
= Max.,
= 0 mA, f = f
≤ 0.2V, f = 0
IH
DD
IH
DD
Test Conditions
V
V
GND ≤ V
GND ≤ V
, f = 0
or V
– 0.2V, or
– 0.2V,
DD
DD
IL
= Min., I
= Min., I
MAX
Integrated Silicon Solution, Inc. — www.issi.com —
OUT
IN
(1)
(Over Operating Range)
≤ V
(Over Operating Range)
OH
≤ V
OL
Com.
Com.
Com.
DD
Ind.
Ind.
Ind.
= 8.0 mA
= –4.0 mA
DD
, Outputs Disabled
Min.
—
—
—
—
—
—
-8
Max.
110
120
30
35
20
25
Com.
Com.
Ind.
Ind.
Min.
—
—
—
—
—
—
-10
Min.
–0.3
2.4
2.2
–5
—
–1
–1
–5
Max.
100
110
30
35
20
25
V
DD
Max.
0.4
0.8
ISSI
—
1
5
1
5
+ 0.3
1-800-379-4774
Unit
mA
mA
mA
04/13/06
Unit
µA
µA
Rev. C
V
V
V
V
®