is61lf25636a Integrated Silicon Solution, Inc., is61lf25636a Datasheet

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is61lf25636a

Manufacturer Part Number
is61lf25636a
Description
256k X 36, 512k X 18 9 Mb Synchronous Flow-through Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet

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IS61LF25636A
IS61LF51218A IS61VF51218A
256K x 36, 512K x 18
9 Mb SYNCHRONOUS FLOW-THROUGH
STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
• JEDEC 100-Pin TQFP, 119-pin PBGA, and
• Lead-free available
FAST ACCESS TIME
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
10/18/07
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
control
sion and address pipelining
LF: V
VF: V
165-pin PBGA packages
Symbol
t
t
KQ
KC
DD
DD
3.3V + 5%, V
2.5V + 5%, V
Parameter
Clock Access Time
Cycle Time
Frequency
DDQ
DDQ
3.3V/2.5V + 5%
2.5V + 5%
IS61VF25636A
DESCRIPTION
The
high-speed, low-power synchronous static RAMs designed
to provide burstable, high-performance memory for commu-
nication and networking applications. The IS61LF/
VF25636A is organized as 262,144 words by 36 bits. The
IS61LF/VF51218A is organized as 524,288 words by 18
bits. Fabricated with
the device integrates a 2-bit burst counter, high-speed
SRAM core, and high-drive capability outputs into a single
monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single
clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (BWE) input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW) is
available for writing all bytes at one time, regardless of the
byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the ADV (burst address ad-
vance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
-6.5
133
6.5
7.5
ISSI
IS61LF/VF25636A and IS61LF/VF51218A are
-7.5
117
7.5
8.5
ISSI
's advanced CMOS technology,
OCTOBER 2007
Units
MHz
ns
ns
1

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is61lf25636a Summary of contents

Page 1

... IS61LF25636A IS61VF25636A IS61LF51218A IS61VF51218A 256K x 36, 512K SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • ...

Page 2

... IS61LF25636A IS61LF51218A BLOCK DIAGRAM CLK ADV ADSC ADSP 18/ BWE BW(a-d) x18: a,b x36: a-d CE CE2 CE2 POWER ZZ DOWN OE 2 IS61VF25636A MODE A0' Q0 CLK A0 BINARY COUNTER A1 CLR MEMORY ARRAY 16/17 18/ ADDRESS REGISTER CE CLK 36 DQ(a-d) BYTE WRITE REGISTERS CLK 2/4/8 INPUT D Q REGISTERS ...

Page 3

... IS61LF25636A IS61LF51218A 165-PIN BGA 165-Ball, 13x15 mm BGA BOTTOM VIEW Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. C 10/18/07 IS61VF25636A IS61VF51218A 119-PIN BGA 119-Ball, 14x22 mm BGA BOTTOM VIEW 3 ...

Page 4

... IS61LF25636A IS61LF51218A 119 BGA PACKAGE PIN CONFIGURATION DDQ B NC CE2 DQc DQPc Vss E DQc DQc Vss F V DQc Vss DDQ BWc G DQc DQc H DQc DQc Vss DDQ DD K DQd DQd Vss BWd L DQd DQd M V DQd ...

Page 5

... IS61LF25636A IS61LF51218A 119 BGA PACKAGE PIN CONFIGURATION 512K 18 (TOP VIEW DDQ B NC CE2 DQb NC Vss E NC DQb Vss Vss DDQ BWb G NC DQb H DQb NC Vss DDQ DQb Vss L DQb NC Vss M V DQb ...

Page 6

... IS61LF25636A IS61LF51218A 165 PBGA PACKAGE PIN CONFIGURATION 256K 36 (TOP VIEW CE2 C DQPc NC V DDQ D DQc DQc V DDQ E DQc DQc V DDQ F DQc DQc V DDQ G DQc DQc V DDQ H NC Vss NC J DQd DQd V DDQ K DQd DQd V DDQ L DQd ...

Page 7

... IS61LF25636A IS61LF51218A 165 PBGA PACKAGE PIN CONFIGURATION 512K 18 (TOP VIEW CE2 DDQ D NC DQb V DDQ E NC DQb V DDQ F NC DQb V DDQ G NC DQb V DDQ H NC Vss NC J DQb NC V DDQ K DQb NC V DDQ L DQb ...

Page 8

... IS61LF25636A IS61LF51218A PIN CONFIGURATION 100 DQPc 1 2 DQc 3 DQc 4 VDDQ 5 VSS DQc 6 DQc 7 DQc 8 DQc 9 VSS 10 VDDQ 11 12 DQc 13 DQc VDD VSS 18 DQd 19 DQd 20 VDDQ VSS 21 DQd 22 DQd 23 DQd 24 DQd ...

Page 9

... IS61LF25636A IS61LF51218A PIN CONFIGURATION 100 VDDQ 5 VSS DQb 8 DQb 9 10 VSS VDDQ 11 12 DQb 13 DQb VDD 16 NC VSS 17 18 DQb 19 DQb VDDQ 20 21 VSS DQb ...

Page 10

... IS61LF25636A IS61LF51218A TRUTH TABLE (1-8) ADDRESS CE OPERATION Deselect Cycle, Power-Down None Deselect Cycle, Power-Down None Deselect Cycle, Power-Down None Deselect Cycle, Power-Down None Deselect Cycle, Power-Down None Snooze Mode, Power-Down None Read Cycle, Begin Burst External Read Cycle, Begin Burst External Write Cycle, Begin Burst ...

Page 11

... IS61LF25636A IS61LF51218A INTERLEAVED BURST ADDRESS TABLE (MODE = V External Address 1st Burst Address LINEAR BURST ADDRESS TABLE (MODE = VSS) A1', A0' = 1,1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter T Storage Temperature STG P Power Dissipation D I Output Current (per I/O) OUT Voltage Relative to Vss for I/O Pins ...

Page 12

... IS61LF25636A IS61LF51218A OPERATING RANGE (IS61LFxxxxx) Range Ambient Temperature Commercial 0°C to +70°C Industrial -40°C to +85°C OPERATING RANGE (IS61VFxxxxx) Range Ambient Temperature Commercial 0°C to +70°C Industrial -40°C to +85°C DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions V Output HIGH Voltage Output LOW Voltage ...

Page 13

... IS61LF25636A IS61LF51218A (1,2) CAPACITANCE Symbol Parameter C Input Capacitance IN C Input/Output Capacitance OUT Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions 25° MHz 3.3V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times ...

Page 14

... IS61LF25636A IS61LF51218A 2.5V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load See Figures 3 and 4 2.5V I/O OUTPUT LOAD EQUIVALENT Z = 50Ω O OUTPUT Figure 3 14 IS61VF25636A Unit 0V to 2.5V 1.5 ns 1.25V OUTPUT 50Ω 1.25V Integrated Silicon Solution, Inc. — 1-800-379-4774 IS61VF51218A 1,667 Ω ...

Page 15

... IS61LF25636A IS61LF51218A READ/WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter fmax Clock Frequency t Cycle Time KC t Clock High Time KH t Clock Low Time KL t Clock Access Time KQ t (2) Clock High to Output Invalid KQX t (2,3) Clock High to Output Low-Z KQLZ (2,3) t Clock High to Output High-Z KQHZ ...

Page 16

... IS61LF25636A IS61LF51218A READ/WRITE CYCLE TIMING CLK ADSP t SS ADSC ADV Address RD1 BWE BWd-BWa t t CES CEH CES CEH CE2 t t CES CEH CE2 t OELZ t OEQ OE High-Z DATA OUT t KQLZ t KQ High-Z DATA ...

Page 17

... IS61LF25636A IS61LF51218A WRITE CYCLE TIMING CLK ADSP ADSC ADV must be inactive for ADSP Write ADV Address WR1 BWE t WS BWd-BWa WR1 t t CES CEH CES CEH CE2 t t CES CEH CE2 OE High-Z DATA ...

Page 18

... IS61LF25636A IS61LF51218A SNOOZE MODE ELECTRICAL CHARACTERISTICS Symbol Parameter I Current during SNOOZE MODE active to input ignored PDS t ZZ inactive to input sampled PUS t ZZ active to SNOOZE current ZZI t ZZ inactive to exit SNOOZE current RZZI SNOOZE MODE TIMING CLK t PDS ZZ setup cycle ...

Page 19

... IS61LF25636A IS61LF51218A IEEE 1149.1 SERIAL BOUNDARY SCAN (JTAG) The IS61LF/VF25636A and IS61LF/VF51218A have a serial boundary scan Test Access Port (TAP) in the PBGA package only. This port operates in accordance with IEEE Standard 1149.1-1900, but does not include all functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because they place added delay in the critical speed path of the SRAM ...

Page 20

... IS61LF25636A IS61LF51218A TEST DATA OUT (TDO) The TDO output pin is used to serially clock data-out from the registers. The output is active depending on the current state of the TAP state machine (see TAP Controller State Diagram). The output changes on the falling edge of TCK and TDO is connected to the Least Significant Bit (LSB) of any register ...

Page 21

... IS61LF25636A IS61LF51218A TAP INSTRUCTION SET Eight instructions are possible with the three-bit instruction register and all combinations are listed in the Instruction Code table. Three instructions are listed as RESERVED and should not be used and the other five instructions are described below. The TAP controller used in this SRAM is not fully compliant with the 1149 ...

Page 22

... IS61LF25636A IS61LF51218A INSTRUCTION CODES Code Instruction Description 000 EXTEST Captures the Input/Output ring contents. Places the boundary scan register between the TDI and TDO. Forces all SRAM outputs to High-Z state. This instruction is not 1149.1 compliant. 001 IDCODE Loads the ID register with the vendor ID code and places the register between TDI and TDO ...

Page 23

... IS61LF25636A IS61LF51218A TAP Electrical Characteristics Over the Operating Range Symbol Parameter V Output HIGH Voltage OH1 V Output HIGH Voltage OH2 V Output LOW Voltage OL1 V Output LOW Voltage OL2 V Input HIGH Voltage IH V Input LOW Voltage IL I Input Load Current X Notes: 1. All Voltage referenced to Ground. ...

Page 24

... IS61LF25636A IS61LF51218A TAP AC TEST CONDITIONS Input pulse levels 0 to 2.5V/0 to 3.0V Input rise and fall times Input timing reference levels Output reference levels Test load termination supply voltage TAP TIMING 1 t THTH TCK TMS TDI TDO 24 IS61VF25636A TAP Output Load Equivalent 1ns 1.25V/1.5V 1 ...

Page 25

... IS61LF25636A IS61LF51218A 119 BGA BOUNDARY SCAN ORDER (256K X 36) Signal Bump Bit # Name ID Bit # DQa DQa DQa DQa DQa DQa DQa ...

Page 26

... IS61LF25636A IS61LF51218A 165 PBGA BOUNDARY SCAN ORDER (x 36) Signal Bump Bit # Name ID Bit # 1 MODE 11P 10P 10R 11R 11H 31 12 DQa 11N 32 13 DQa 11M ...

Page 27

... IS61LF25636A IS61LF51218A 165 PBGA BOUNDARY SCAN ORDER (x 18) Signal Bump Bit # Name ID Bit # 1 MODE 11P 10P 10R 11R 11H 11N 11M 11L ...

Page 28

... IS61LF25636A-7.5B3 IS61LF51218A-6.5TQ IS61LF51218A-6.5B2 IS61LF51218A-6.5B3 IS61LF51218A-7.5TQ IS61LF51218A-7.5B2 IS61LF51218A-7.5B3 Order Part Number IS61LF25636A-6.5TQI IS61LF25636A-6.5B2I IS61LF25636A-6.5B3I IS61LF25636A-7.5TQI IS61LF25636A-7.5TQLI IS61LF25636A-7.5B2I IS61LF25636A-7.5B3I IS61LF51218A-6.5TQI IS61LF51218A-6.5B2I IS61LF51218A-6.5B3I IS61LF51218A-7.5TQI IS61LF51218A-7.5TQLI IS61LF51218A-7 ...

Page 29

... IS61LF25636A IS61LF51218A ORDERING INFORMATION (V Commercial Range: 0°C to +70°C Configuration Access Time 256Kx36 6.5 256Kx36 7.5 512Kx18 6.5 512Kx18 7.5 Industrial Range: -40°C to +85°C Configuration Access Time 256Kx36 6.5 256Kx36 7.5 512Kx18 6.5 512Kx18 7.5 Note: 1. For 100 TQFP, 2CE option contact SRAM Marketing at sram@issi.com Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev ...

Page 30

... BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

Page 31

... Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

Page 32

... E 15.90 16.10 0.626 0.634 E1 13.90 14.10 0.547 0.555 e 0.65 BSC 0.026 BSC L 0.45 0.75 0.018 0.030 L1 1.00 REF. 0.039 REF Integrated Silicon Solution, Inc. — 1-800-379-4774 PK13197LQ Rev. D 05/08/ Millimeters Inches Max Min Max Min 128 0.063 — 1.60 — 0.05 0.15 0.002 0.006 1.35 1.45 0.053 0.057 ...

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