ap4407gr ETC-unknow, ap4407gr Datasheet

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ap4407gr

Manufacturer Part Number
ap4407gr
Description
P-channel Enhancement Mode Power Mosfet
Manufacturer
ETC-unknow
Datasheet
▼ ▼ ▼ ▼ Lower On-resistance
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Fast Switching Characteristic
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
A
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
±25
180
-30
-50
-32
0.4
54
DS(ON)
D
DSS
S
Value
2.3
62
AP4407GR
TO-262(R)
14mΩ
-30V
-50A
Units
W/℃
Units
℃/W
℃/W
200218051
W
V
V
A
A
A

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ap4407gr Summary of contents

Page 1

... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP4407GR Pb Free Plating Product BV -30V DSS R 14mΩ DS(ON) I -50A TO-262(R) S Rating Units -30 ±25 ...

Page 2

... AP4407GR Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... - =25 ℃ ℃ ℃ ℃ C 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 3.0 2.5 2 1.5 1.0 0.5 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP4407GR -10V o C -8.0V -6.0V -4.5V V =-3. Drain-to-Source Voltage (V) DS =-24A =-10V 0 50 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...

Page 4

... AP4407GR -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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