74hct3g14 NXP Semiconductors, 74hct3g14 Datasheet - Page 2

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74hct3g14

Manufacturer Part Number
74hct3g14
Description
Inverting Schmitt-triggers
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
FEATURES
2. For HC3G14 the condition is V
2003 Nov 04
QUICK REFERENCE DATA
GND = 0 V; T
Notes
1. C
t
C
C
PHL
SYMBOL
Wide supply voltage range from 2.0 to 6.0 V
High noise immunity
Low power dissipation
Balanced propagation delays
Unlimited input rise and fall times
Very small 8 pins package
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
Specified from 40 to +85 C and 40 to +125 C.
I
PD
Inverting Schmitt-triggers
P
f
f
C
V
N = total switching outputs;
For HCT3G14 the condition is V
i
o
/t
(C
D
CC
PD
= input frequency in MHz;
L
PLH
= output frequency in MHz;
= output load capacitance in pF;
= C
L
= supply voltage in Volts;
is used to determine the dynamic power dissipation (P
PD
V
CC
amb
propagation delay nA to nY
input capacitance
power dissipation capacitance per buffer
2
V
CC
= 25 C; t
f
o
2
) = sum of the outputs.
f
i
N + (C
r
= t
PARAMETER
f
6.0 ns.
L
I
= GND to V
I
= GND to V
V
CC
2
f
o
) where:
CC
CC
.
1.5 V.
2
C
notes 1 and 2
APPLICATIONS
DESCRIPTION
The 74HC3G/HCT3G14 is a high-speed Si-gate CMOS
device.
The 74HC3G/HCT3G14 provides three inverting buffers
with Schmitt-trigger action. This device is capable of
transforming slowly changing input signals into sharply
defined, jitter-free output signals.
L
D
Wave and pulse shapers for highly noisy environments
Astable multivibrators
Monostable multivibrators
Output capability: standard.
= 50 pF; V
in W).
CONDITIONS
CC
= 4.5 V 16
74HC3G14; 74HCT3G14
2
10
HC3G14
TYPICAL
Product specification
21
2
10
HCT3G14
ns
pF
pF
UNIT

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