74lvc1g97gm NXP Semiconductors, 74lvc1g97gm Datasheet - Page 9

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74lvc1g97gm

Manufacturer Part Number
74lvc1g97gm
Description
74lvc1g97 Low-power Configurable Multiple Function Gate
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
13. Transfer characteristics
Table 12.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
[1]
14. Waveforms transfer characteristics
74LVC1G97
Product data sheet
Symbol Parameter
V
V
V
Fig 14. Transfer characteristic
T+
T
H
Typical values are measured at T
positive-going
threshold voltage
negative-going
threshold voltage
hysteresis voltage (V
Transfer characteristics
V
O
V
T−
V
H
Conditions
see
Figure 16
see
Figure 16
Figure
Figure 16
V
V
V
V
V
V
V
V
V
V
V
T+
V
V
V
V
V
T+
amb
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
Figure
Figure
 V
= 25 C.
= 1.8 V
= 2.3 V
= 3.0 V
= 4.5 V
= 5.5 V
= 1.8 V
= 2.3 V
= 3.0 V
= 4.5 V
= 5.5 V
= 1.8 V
= 2.3 V
= 3.0 V
= 4.5 V
= 5.5 V
14,
T
and
and
). See
and
Figure
mna207
14,
14,
All information provided in this document is subject to legal disclaimers.
V
Figure 17
Figure 17
Figure 17
Figure
Figure
I
15,
Rev. 2 — 9 March 2011
15,
15,
Fig 15. Definition of V
0.70
1.11
1.50
2.16
2.61
0.30
0.58
0.80
1.21
1.45
0.30
0.40
0.50
0.71
0.71
Min
Low-power configurable multiple function gate
40 C to +85 C
V
V
V
O
I
T+
1.02
1.42
1.79
2.52
2.99
0.53
0.77
1.04
1.55
1.86
0.48
0.64
0.75
0.97
1.13
and V
Typ
[1]
V
T
T+
limits are at 70 % and 20 %.
1.20
1.60
2.00
2.74
3.33
0.72
1.00
1.30
1.90
2.29
0.62
0.80
1.00
1.20
1.40
Max
T+
, V
T
and V
0.67
1.08
1.47
2.13
2.58
0.30
0.58
0.80
1.21
1.45
0.23
0.34
0.44
0.65
0.65
40 C to +125 C Unit
V
74LVC1G97
T−
Min
H
© NXP B.V. 2011. All rights reserved.
1.20
1.60
2.00
2.74
3.33
0.75
1.03
1.33
1.93
2.32
0.62
0.80
1.00
1.20
1.40
Max
mna208
V
H
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
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