74lvc1g66 NXP Semiconductors, 74lvc1g66 Datasheet - Page 14

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74lvc1g66

Manufacturer Part Number
74lvc1g66
Description
Bilateral Switch
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
Table 12.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); T
74LVC1G66_6
Product data sheet
Symbol
Q
Fig 19. Test circuit for measuring total harmonic distortion
Fig 20. Test circuit for measuring the frequency response when switch is in ON-state
inj
Test conditions:
V
V
V
V
Adjust f
CC
CC
CC
CC
Additional dynamic characteristics
= 1.65 V: V
= 2.3 V: V
= 3 V: V
= 4.5 V: V
Parameter
charge injection
i
11.3 Test circuits
voltage to obtain 0 dBm level at output. Increase f
i
= 2.5 V (p-p).
i
i
= 2 V (p-p).
= 4 V (p-p).
i
= 1.4 V (p-p).
f i
V
IH
V
IH
f i
50
0.1 pF
Conditions
C
f
i
L
= 1 MHz; R
V
V
V
V
V
= 0.1 nF; V
CC
CC
CC
CC
CC
Y/Z
600
Y/Z
E
Rev. 06 — 27 August 2007
…continued
= 1.8 V
= 2.5 V
= 3.3 V
= 4.5 V
= 5.5 V
E
V
L
CC
V
gen
= 1 M ; see
CC
= 0 V; R
i
frequency until dB meter reads 3 dB.
Z/Y
Z/Y
0.5V
0.5V
CC
gen
R L
CC
Figure 23
R L
= 0 ;
C L
C L
10 pF
001aag492
dB
D
001aag491
V
O
amb
V
Min
-
-
-
-
-
O
= 25 C.
74LVC1G66
Typ
3.3
4.1
5.0
6.4
7.5
© NXP B.V. 2007. All rights reserved.
Bilateral switch
Max
-
-
-
-
-
Unit
pC
pC
pC
pC
pC
14 of 22

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