max555ccbtd Maxim Integrated Products, Inc., max555ccbtd Datasheet - Page 3

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max555ccbtd

Manufacturer Part Number
max555ccbtd
Description
Max555 300msps, 12-bit Dac With Complementary Voltage Outputs
Manufacturer
Maxim Integrated Products, Inc.
Datasheet
ELECTRICAL CHARACTERISTICS (continued)
(AV
Note 2: All devices are 100% production tested at +25°C and are guaranteed by design for T
Note 3: The gain-error method of calculation is shown below:
Note 4: Dynamic and timing specifications are obtained from device characterization and simulation testing and are not production tested.
Note 5: Spurious-free dynamic range is measured from the fundamental frequency to any harmonic or nonharmonic spurs within the
Note 6: Guaranteed by design.
Note 7: Timing definitions are detailed in Figure 2.
Input Current, Logic High
Input Current, Logic Low
Logic "1" Voltage
Logic "0" Voltage
DIGITAL TIMING
Data Update Rate
Data-to-Clock Setup Time
Data-to-Clock Hold Time
Clock-to-VOUT
Propagation Delay
LSBs Data-to-VOUT
Propagation Delay
MSBs Data-to-VOUT
Propagation Delay
MSBs Decode Delay
Amplifier Input Resistance
Multiplying Input Bandwidth
Open-Loop Gain
Input Offset Voltage
Full-Scale Output Current
Output Resistance
Output Capacitance
Analog Power-Supply Current
Digital Power-Supply Current
Power Dissipation
Package Thermal Resistance,
Junction to Ambient
DIGITAL INPUTS
CONTROL AMPLIFIER
POWER SUPPLIES
OUTPUT PERFORMANCE
EE
= DV
Definition:
GE(%) = ––––––––––––––––––––––––––––––––––
where FS indicates full-scale measurements.
bandwidth f
PARAMETER
EE
= -5.2V, V
[V
MEASURE(FS)
CLK
_______________________________________________________________________________________
/2, unless otherwise specified.
REF
= 1.000V, T
V
IDEAL(FS)
- V
SYMBOL
IDEAL(FS)
t
C
P
AV
R
HOLD
I
DI
t
t
t
AI
V
t
R
BW
OUT
T
V
t
PD3
PD2
PD1
V
DISS
I
OUT
I
DD
OUT
f
SU
IH
OS
IL
JA
IH
D
MIN
IL
IN
EE
EE
OL
Complementary Voltage Outputs
to T
] x 100
V
V
Minimum data rate = DC (Note 6)
Bypass = 0, clocked mode (Notes 4, 7)
Bypass = 0, clocked mode (Notes 4, 7)
Bypass = 0, clocked mode (Notes 4, 7)
Bypass = 1, transparent mode (Notes 4, 7)
Bypass = 1, transparent mode (Notes 4, 7)
Bypass = 1, transparent mode (Notes 4, 7)
V
-3dB
T
T
V
VOUT, VOUT
VOUT, VOUT
AV
AV
MAX
A
A
IH
IL
REF
REF
EE
EE
= +25°C
= +25°C
= -1.95V
= -0.75V
= 0°C to +70°C, unless otherwise noted.) (Note 2.)
= 1.000V
= 1.000V, R
= DV
= DV
EE
EE
GE Method:
GE(%) = [(4096 / 4095) V
where: V
300Msps, 12-Bit DAC with
= -5.2V
= -5.2V
CONDITIONS
L
= [(4096 / 4095) V
––––––––––––––––––––––––––––––––
= 0Ω
REF
–––––––––––––––––––––––––––––––––––––––––––––——
= 1.000V, R
MEASURE
1
16(V
IN
MEASURE
= 800Ω, R
REF
/ R
- 1] x 100
A
IN
= T
- 16(V
) (R
-250
19.0
49.5
OUT
MIN
-1.1
-2.0
300
775
110
30
MIN
3
OUT
REF
= 50Ω, V
to T
)
/ R
-0.75
-1.95
MAX
TYP
20.0
50.0
0.98
900
800
150
0.8
2.8
2.9
10
10
20
15
46
25
1
1
2
0
IN
) (R
MEASURE
as specified.
OUT
-1.48
+250
MAX
21.0
50.5
200
825
190
1.3
60
2
0
)] x 100
= VOUT (FS).
UNITS
°C/W
MHz
MHz
kV/V
mA
mA
mA
µA
µA
ps
µV
pF
ns
ns
ns
ns
ns
W
V
V
3

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