mc33164dm-5 ON Semiconductor, mc33164dm-5 Datasheet - Page 6

• Manufacturer Part Number: mc33164dm-5
• Description: Micropower Undervoltage Sensing Circuits
• Manufacturer: ON Semiconductor

Comparator hysteresis can be increased with the addition of resistor R
I
equations are accurate to ±10% with R
in
Supply
Power
Supply
Power
as V
in
crosses the comparator threshold (Figure 8). An increase of the lower threshold DV
4.3V
I
in
Figure 16. Voltage Monitor
MC3X164−5
Figure 18. MOSFET Low Voltage Gate Drive Protection Using the MC3X164−5
R
Input
H
1.2 V
1.2 V
Figure 15. Low Voltage Microprocessor Reset With Additional Hysteresis
V
in
ref
ref
GND
GND
H
less than 1.0 kW and R
Input
1.2 V
MC34164, MC33164, NCV33164
ref
GND
Reset
MC3X164−5
L
between 4.3 kW and 43 kW.
270
H
(MC3X164−5 Shown)
http://onsemi.com
. The hysteresis equation has been simplified and does not account for the change of input current
V
DV
where: R
43 kW ≥ R
R
1.0 k
H
L
≈
th(lower)
Reset
4.3 R
H
R
≈ 10 R
≤ 1.0 kW
L
6
L
Reset
≥ 4.3 kW
H
Overheating of the logic level power MOSFET due to insufficient
gate voltage can be prevented with the above circuit. When the
input signal is below the 4.3 V threshold of the MC3X164−5, its
output grounds the gate of the L
Microprocessor
H
+ 0.06
x 10
V
CC
Circuit
th(lower)
Figure 17. Solar Powered Battery Charger
− 6
MTP3055EL
R
L
will be observed due to I
Input
1.2 V
ref
GND
(mV)
2
103
123
160
155
199
280
262
306
357
421
530
V
60
MOSFET.
H
in
which is typically 10 mA at 4.3 V. The
DV
(mV)
1.0
1.0
1.0
2.2
2.2
2.2
4.7
4.7
4.7
4.7
4.7
0
Test Data
th
Reset
100
100
100
220
220
220
470
470
470
470
470
(W)
R
0
H
Solar
(kW)
Cells
6.8
4.3
6.8
4.3
8.2
6.8
5.6
4.3
R
43
10
10
10
L