sta323wqs STMicroelectronics, sta323wqs Datasheet - Page 14

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sta323wqs

Manufacturer Part Number
sta323wqs
Description
2.1-channel High-efficiency Digital Audio System With Qsound Qhd??
Manufacturer
STMicroelectronics
Datasheet
Electrical characteristics
3
Note:
Note:
14/72
2
1
Electrical characteristics
V
Table 8.
The leakage currents are generally very small < 1na. The values given here are maximum
after an electrostatic stress on the pin.
Human body model.
Table 9.
Table 10.
I
I
I
V
V
V
V
V
V
R
g
g
Dt_s
t
t
t
t
Symbol
Symbol
il
ih
OZ
I
d ON
d OFF
r
f
DD3
dss
N
P
esd
ol
oh
IL
IH
hyst
Symbol
dsON
= 3.3V ± 0.3V; T
Power Pchannel/Nchannel
MOSFET R
Power Pchannel/Nchannel
leakage I
Power Pchannel R
matching
Power Nchannel R
matching
Low current dead time
(static)
Turn-on delay time
Turn-off delay time
Rise time
Fall time
Low level Input voltage
High level Input voltage
Schmitt trigger hysteresis
Low level output
High level output
Low level input no pull-up
High level input no
pull-down
Tristate output leakage
without pull-up/down
Electrostatic protection
General interface electrical characteristics
DC electrical characteristics: 3.3 V buffers
Power electrical characteristics (V
unless otherwise specified)
Parameter
Parameter
dss
Parameter
dsON
amb
= 25°C; unless otherwise specified.
dsON
dsON
IoI = 2mA
Ioh = -2mA
Test condition
Id=1 A
Vcc=35 V
Id=1 A
Id=1 A
See test circuit no.1; see
Figure 12
Resistive load
Resistive load
Resistive load
Resistive load; as
V
V
V
Leakage < 1µA
i
i
i
Test Condition
= 0V
= V
= V
Test conditions
DD3
DD3
L
2.0
0.4
VDD -0.15
= 3.3 V; Vcc = 30 V; T
Figure 12
Min.
2000
Min.
95
95
Min.
Typ.
Typ. Max.
0.8
0.15
200
10
1
2
2
Typ.
amb
Max.
µA
µA
µA
V
50
20
100
100
25
25
270
= 25 °C
STA323WQS
Unit
Max.
1
1
1
2
mΩ
µA
%
%
ns
ns
ns
ns
ns
V
V
V
V
V
Note
Unit
Unit

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