tda5255e1 Infineon Technologies Corporation, tda5255e1 Datasheet - Page 43
tda5255e1
Manufacturer Part Number
tda5255e1
Description
Ask/fsk 434mhz Wireless Transceiver
Manufacturer
Infineon Technologies Corporation
Datasheet
1.TDA5255E1.pdf
(93 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TDA5255E1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
- Current page: 43 of 93
- Download datasheet (3Mb)
Confidential
The diagram of Figure 3-7 has been measured directly at the PA-output at V
the matching circuit of about 3dB will decrease the output power. As shown in the diagram, 250
Ohm is the optimum impedance for operation at 3V. For an approximation of R
other supply voltages those 2 formulas can be used:
and
Figure 3-7
The DC collector current I c of the power amplifier and the RF output power P o vary with the load
resistor R L . This is typical for overcritical operation of class C amplifiers. The collector current will
show a characteristic dip at the resonance frequency for this type of “overcritical” operation. The
depth of this dip will increase with higher values of R L .
As Figure 3-8 shows, detuning beyond the bandwidth of the matching circuit results in a significant
increase of collector current of the power amplifier and in some loss of output power. This diagram
shows the data for the circuit of the test board at the frequency of 434MHz. The effective load
resistor of this circuit is R L = 250Ohm, which is the optimum impedance for operation at 3V. This will
lead to a dip of the collector current f approx. 20%.
Preliminary Specification
P
E
R
OUT
OPT
V
~
P
S
~
R
O
I
C
OPT
V
S
Output power P o (mW) and collector efficiency E vs. load resistor R L .
43
[3 – 11]
[3 – 12]
[3 – 10]
S
=3V. A power loss in
OPT
Power_E_vs_RL_434.wmf
TDA5255 E1
Version 1.1
Application
and P
2002-11-28
OUT
at
Related parts for tda5255e1
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Antenna Switch Silicon Pin Diode
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Silicon Switching Diodes
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Single Igbt Driver Ic
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
5 Volt Standard Regulator
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Active Biased Transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
N-channel Small Signal Mosfet 20v?800v
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Sipmos Small-signal Transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Complementary Mosfets 60v Small-signal-transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Complementary Mosfets 60v
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
P-channel Mosfets Power-transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Power Mosfets
Manufacturer:
Infineon Technologies Corporation
Datasheet: