adg407bpz-rl Analog Devices, Inc., adg407bpz-rl Datasheet - Page 3

• Manufacturer Part Number: adg407bpz-rl
• Description: Lc2mos 8-/16-channel High Performance Analog Multiplexers
• Manufacturer: Analog Devices, Inc.

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SINGLE SUPPLY
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature ranges are as follows: B Versions: –40 C to +85 C; T Versions: –55 C to +125 C.
Guaranteed by design, not subject to production test.
Analog Signal Range
R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
Break Before Make Delay, t
t
t
ADG426 Only
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
C
C
I
I
TRANSITION
ON
OFF
DD
DD
ON
IN
S
D
D
ADG406, ADG426
ADG407
ADG406, ADG426
ADG407
I
t
t
t
t
ADG406, ADG426
ADG407
, C
ADG406, ADG426
ADG407
(OFF)
, Digital Input Capacitance
(EN, WR)
(OFF)
INL
W
S
H
RS
(EN, RS)
, Address, Enable Setup Time
, Address, Enable Hold Time
, Write Pulse Width
, Reset Pulse Width
S
or I
(ON)
INH
D
INL
INH
S
(OFF)
D
(OFF)
, I
S
(V
OPEN
(ON)
DD
= +12 V
2
+25 C
90
125
8
180
220
10
180
240
135
180
5
–75
85
8
80
40
100
50
100
200
0.5
1
1
1
1
10%, V
B Version
SS
= 0 V, GND = 0 V, unless otherwise noted)
–40 C to
+85 C
0 to V
200
2.4
0.8
350
350
220
100
100
10
100
1
5
500
20
20
20
20
20
1
DD
+25 C
90
125
8
180
220
10
180
240
135
180
5
–75
85
8
80
40
100
50
100
200
0.5
1
1
1
1
–3–
T Version
–55 C to
+125 C
0 to V
200
2.4
0.8
350
350
220
100
100
10
100
1
5
500
50
200
100
200
100
1
DD
Units
V
nA max
nA max
nA max
nA max
nA max
V min
V max
pF typ
ns typ
ns max
ns typ
ns typ
ns max
ns typ
ns max
ns min
ns min
ns min
ns min
pC typ
dB typ
dB typ
pF typ
pF typ
pF typ
pF typ
pF typ
A max
A typ
A max
A typ
A max
typ
max
ADG406/ADG407/ADG426
Test Conditions/Comments
V
V
V
V
Test Circuit 2
V
Test Circuit 3
V
V
f = 1 MHz
R
V
Test Circuit 5
R
V
R
V
R
V
V
V
Test Circuit 10
R
Test Circuit 11
R
Test Circuit 12
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
V
V
D
DD
DD
D
D
S
IN
L
1
L
S
L
S
L
S
S
S
L
L
DD
IN
IN
= V
= +3 V, +8.5 V, I
= 8 V/0.1 V, V
= 8 V/0.1 V, V
= 8 V/0 V, V
= +5 V, Test Circuit 6
= +5 V, Test Circuit 7
= +5 V, Test Circuit 7
= +5 V
= 6 V, R
= 300 , C
= 300 , C
= 300 , C
= 300 , C
= 1 k , f = 100 kHz;
= 1 k , f = 100 kHz;
= 0 or V
= 0 V, V
= 0 V, V
= +10.8 V
= +13.2 V
= +13.2 V
D
= 8 V/0.1 V, Test Circuit 4
S
DD
EN
EN
= 0 , C
L
L
L
L
= 0 V
= 2.4 V
2
= 35 pF;
= 35 pF;
= 35 pF;
= 35 pF;
= 0 V/8 V;
S
S
= 0.1 V/8 V;
= 0.1 V/8 V;
S
L
= –1 mA;
= 1 nF;