adg509f Analog Devices, Inc., adg509f Datasheet - Page 2

• Manufacturer Part Number: adg509f
• Description: 4/8 Channel Fault-protected Analog Multiplexers
• Manufacturer: Analog Devices, Inc.

ADG508F/ADG509F/ADG528F–SPECIFICATIONS
Dual Supply
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
FAULT
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
Specifications subject to change without notice.
Guaranteed by design, not subject to production test.
Analog Signal Range
R
R
R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Output Leakage Current
Input Leakage Current
Input Leakage Current
Input High Voltage, V
Input Low Voltage, V
Input Current, I
C
t
t
t
t
t
ADG528F Only
Charge Injection
OFF Isolation
C
C
I
I
TRANSITION
OPEN
ON
OFF
SETT
DD
SS
ON
ON
ON
IN
S
D
ADG508F/ADG528F
ADG509F
ADG508F/ADG528F
ADG509F
(With Overvoltage)
(With Overvoltage)
(With Power Supplies OFF)
0.1%
0.01%
t
t
t
t
ADG508F/ADG528F
ADG509F
W
S
H
RS
(OFF)
(OFF)
, Digital Input Capacitance
(EN, WR)
, Address, Enable Setup Time
(EN, RS)
Drift
, Address, Enable Hold Time
Match
, Write Pulsewidth
, Settling Time
, Reset Pulsewidth
INL
(V
DD
or I
D
INL
= +15 V
INH
S
D
INH
(OFF)
(OFF)
, I
S
(ON)
10%, V
1
SS
= –15 V
+25 C
300
0.6
5
± 0.02
± 1
± 0.04
± 1
± 1
± 0.04
± 1
± 1
± 0.02
± 2
± 0.005
± 2
± 0.001
± 2
5
200
300
50
25
200
250
200
250
100
4
68
50
5
50
25
0.1
0.1
B Version
10%, GND = 0 V, unless otherwise noted)
–40 C to
+85 C
V
V
350
400
± 50
± 60
± 30
± 60
± 30
± 2
2.4
0.8
± 1
400
10
400
400
1
2.5
120
100
10
100
0.2
0.1
SS
DD
+ 3
– 1.5
Unit
V min
Ω typ
Ω max
%/°C typ
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
nA typ
µA max
µA typ
µA max
µA typ
µA max
V min
V max
µA max
pF typ
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
µs typ
µs typ
ns min
ns min
ns min
dB typ
dB min
pF typ
pF typ
pF typ
mA max
mA max
V max
% max
ns min
pC typ
Test Conditions/Comments
–10 V < V
V
–10 V < V
V
V
V
V
Test Circuit 2
V
Test Circuit 3
V
Test Circuit 4
V
V
V
Test Circuit 6
V
R
V
R
V
R
V
R
V
R
V
V
R
V
V
S
DD
DD
S
S
D
D
S
S
S
S
IN
L
S1
L
S
L
S
L
S
L
S
L
S
IN
= 0 V, R
= 0 V, I
= 0 V, I
= V
= ± 33 V, V
= ± 25 V, V
= ± 25 V, V
= 5 V; Test Circuit 8
= 5 V; Test Circuit 9
= 5 V; Test Circuit 9
= 5 V
= 7 V rms; Test Circuit 13
= 1 MΩ, C
= 1 kΩ, C
= 1 kΩ, C
= 1 kΩ, C
= 1 kΩ, C
= 1 kΩ, C
= ± 10 V, V
= ± 10 V, V
= 0 or V
= ± 10 V, V
= 0 V or 5 V
= +15 V ± 10%, V
= +15 V ± 5%, V
D
= ± 10 V;
S
S
S
S
S
< +10 V, I
< +10 V, I
DD
= 0 Ω, C
= 1 mA
= 1 mA
L
L
L
L
L
D
D
D
L
S
S
= 35 pF;
= 35 pF;
= 35 pF;
= 35 pF;
= 15 pF, f = 100 kHz;
S8
= 35 pF;
= 10 V;
= 10 V;
= 0 V, Test Circuit 3
=
= V
=
EN
10 V, Test Circuit 5
L
10 V; Test Circuit 7
= 1 nF; Test Circuit 12
SS
S
S
= A0, A1, A2 = 0 V
SS
= 1 mA;
= 1 mA;
= –15 V ± 5%
= –15 V ± 10%