psfh70 Power Semiconductors, Inc., psfh70 Datasheet - Page 2

• Manufacturer Part Number: psfh70
• Description: Three Phase Half Controlled Bridges With Freewheeling Diode
• Manufacturer: Power Semiconductors, Inc.

Symbol Test Conditions
I
V
V
r
V
I
V
I
I
I
t
t
R
R
d
d
a
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
D
GT
GD
L
H
gd
q
T
S
A
T
TO
GT
GD
, I
thJC
thJK
R
200
[A]
150
100
I F
50
0
Fig. 1 Forward current vs.
voltage drop per diode or
2:T
1:T
VJ
0.5
VJ
T
I
For power-loss calculations only (T
V
V
T
T
T
I
T
T
I
T
-di/dt = 10A/µs, dv/dt = 15V/µs, V
per thyristor; sine 180°el
per module
per thyristor; sine 180° el
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
T
G
G
VJ
VJ
VJ
VJ
VJ
VJ
VJ
D
D
= 125°C
= 80A, T
= 25°C
= 0.45A, di
= 0.45A, di
= 6V
= 6V
= T
= T
= T
= T
= 25°C, t
= 25°C, V
= 25°C, V
thyristor
1
V
VJM
VJM
VJM
VJM
[V]
, I
, V
VJ
1.5
1
T
P
R
= 25°C
= 20A, t
G
G
D
D
= 10µs
/dt = 0.3A/µs
/dt = 0.45A/µs
= V
= 6V, R
= ½ V
2
2
RRM
T
T
T
T
V
V
VJ
VJ
VJ
VJ
D
D
P
DRM
, V
= 2/3 V
= 2/3 V
= 200µs, V
GK
= 25°C
= -40°C
= 25°C
= -40°C
D
= ∞
= V
DRM
DRM
DRM
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
D
R
VJ
= 2/3 V
= 100V
Fig. 2 Gate trigger delay time
100
t gd
us
10
1
10
= T
VJM
DRM
Characteristic Value
)
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
I [mA]
G
100
0.157
1.64
0.85
16.0
0.15
100
200
450
200
250
1.5
1.6
0.2
0.9
1.1
7.6
11
50
5
5
2
T
VJ
=25°C
m/s
K/W
K/W
K/W
K/W
mm
mm
mΩ
1000
mA
mA
mA
mA
mA
mA
µs
µs
V
V
V
V
V
2
I
------
I TSM
T(OV)
Fig. 3 Surge overload current
1.6
1.4
1.2
0.8
0.6
0.4
per diode (or thyristor) I
I
10
1
TSM
0
: Crest value t: duration
10
TVJ=45°C
1
1/2 V RRM
0 V RRM
1 V RRM
t[ms]
550
I
TSM
10
PSFH 70
TVJ=150°C
(A)
2
490
FSM
,
10
3