SI5903DC-T1 Vishay Intertechnology, SI5903DC-T1 Datasheet - Page 2

• Manufacturer Part Number: SI5903DC-T1
• Description: Dual P-channel 2.5-v (g-s) Mosfet
• Manufacturer: Vishay Intertechnology

Notes
a.
b.
www.vishay.com
2-2
Si5903DC
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
Guaranteed by design, not subject to production testing.
10
8
6
4
2
0
0.0
b
V
Parameter
GS
0.5
= 5 thru 4 V
V
a
a
DS
Output Characteristics
a
-- Drain-to-Source Voltage (V)
1.0
a
J
= 25_C UNLESS OTHERWISE NOTED)
1.5
3.5 V
2.0
Symbol
2.5 V
1.5 V
V
3 V
r
2 V
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
2.5
3.0
V
DS
I
V
D
DS
≅ --1 A, V
= --10 V, V
I
V
F
V
= --16 V, V
V
V
V
V
V
V
V
DS
GS
= --0.9 A, di/dt = 100 A/ms
V
GS
GS
I
DS
DS
S
DS
DD
DD
Test Condition
DS
= --0.9 A, V
 --5 V, V
= --4.5 V, I
= V
= --3.6 V, I
= --2.5 V, I
= --10 V, I
= --16 V, V
= --10 V, R
= --10 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= --4.5 V, I
= --4.5 V, R
D
= 0 V, T
GS
GS
D
= --250 mA
D
D
D
GS
GS
L
L
= --2.1 A
= --2.0 A
= --1.7 A
= --2.1 A
= 12 V
= --4.5 V
= 10 Ω
= 10 Ω
= 0 V
= 0 V
J
10
D
= 85_C
G
8
6
4
2
0
= --2.1 A
0.0
= 6 Ω
0.5
V
GS
1.0
Transfer Characteristics
Min
--0.6
--10
-- Gate-to-Source Voltage (V)
1.5
2.0
0.130
0.150
0.215
Typ
--0.8
0.9
0.6
13
35
25
25
40
5
3
T
25_C
C
S-21251—Rev. B, 05-Aug-02
= --55_C
Document Number: 71054
2.5
100
Max
0.155
0.180
0.260
--1.2
3.0
--1
--5
20
55
40
40
80
6
125_C
3.5
Unit
nA
mA
mA
nC
ns
Ω
V
A
S
V
4.0