el2227c ETC-unknow, el2227c Datasheet - Page 14

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el2227c

Manufacturer Part Number
el2227c
Description
Dual Very Noise Amplifier
Manufacturer
ETC-unknow
Datasheet

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EL2227C
Dual Very Low Noise Amplifier
bandwidth product divided by the noise gain of the cir-
cuit. For gains less than 2, higher-order poles in the
amplifiers' transfer function contribute to even higher
closed loop bandwidths. For example, the EL2227C
have a -3dB bandwidth of 115MHz at a gain of +2, drop-
ping to 28MHz at a gain of +5. It is important to note
that the EL2227C have been designed so that this
“extra” bandwidth in low-gain applications does not
come at the expense of stability. As seen in the typical
performance curves, the EL2227C in a gain of +2 only
exhibit 0.5dB of peaking with a 1000 load.
Output Drive Capability
The EL2227C have been designed to drive low imped-
ance loads. They can easily drive 6V
into a 500 load.
PP
This high output drive capability makes the EL2227C an
ideal choice for RF, IF and video applications.
Printed-Circuit Layout
The EL2227C are well behaved, and easy to apply in
most applications. However, a few simple techniques
will help assure rapid, high quality results. As with any
high-frequency device, good PCB layout is necessary
for optimum performance. Ground-plane construction is
highly recommended, as is good power supply bypass-
ing. A 0.1µF ceramic capacitor is recommended for
bypassing both supplies. Lead lengths should be as short
as possible, and bypass capacitors should be as close to
the device pins as possible. For good AC performance,
parasitic capacitances should be kept to a minimum at
both inputs and at the output. Resistor values should be
kept under 5k because of the RC time constants associ-
ated with the parasitic capacitance. Metal-film and
carbon resistors are both acceptable, use of wire-wound
resistors is not recommended because of their parasitic
inductance. Similarly, capacitors should be low-induc-
tance for best performance.
14

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