SI5975DC-T1 Vishay Intertechnology, SI5975DC-T1 Datasheet - Page 3

• Manufacturer Part Number: SI5975DC-T1
• Description: Dual P-channel 12-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Document Number: 71320
S-21251—Rev. B, 05-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
V
I
D
GS
DS
0.2
Source-Drain Diode Forward Voltage
= 3.1 A
= 1.8 V
On-Resistance vs. Drain Current
= 6 V
1
2
V
0.4
SD
Q
T
g
J
-- Source-to-Drain Voltage (V)
I
= 150_C
D
-- Total Gate Charge (nC)
2
0.6
-- Drain Current (A)
Gate Charge
4
V
GS
0.8
3
= 2.5 V
6
1.0
4
T
J
V
= 25_C
1.2
GS
8
= 4.5 V
5
1.4
1.6
10
6
1000
0.25
0.20
0.15
0.10
0.05
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
--50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
--25
GS
C
= 3.1 A
rss
= 4.5 V
1
T
V
V
0
3
J
GS
DS
C
-- Junction Temperature (_C)
iss
-- Gate-to-Source Voltage (V)
-- Drain-to-Source Voltage (V)
C
25
Capacitance
oss
2
Vishay Siliconix
50
6
I
D
= 3.1 A
3
75
Si5975DC
100
9
www.vishay.com
4
125
150
12
5
2-3