nlu1gt32 ON Semiconductor, nlu1gt32 Datasheet - Page 3

• Manufacturer Part Number: nlu1gt32
• Description: Single 2 Input Or Gate, Ttl Level
• Manufacturer: ON Semiconductor

3. C
DC ELECTRICAL CHARACTERISTICS
Symbol
AC ELECTRICAL CHARACTERISTICS
Symbol
load. Average operating current can be obtained by the equation I
dynamic power consumption: P
I
t
V
I
t
V
C
PLH
V
I
CCT
OPD
C
V
PHL
I
CC
PD
OH
IN
OL
PD
IH
IN
IL
,
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
Low-Level Input
Voltage
Low-Level Input
Voltage
High-Level Output
Voltage
Low-Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
Quiescent Supply
Current
Output Leakage
Current
Propagation Delay, Input
A or B to Y
Input Capacitance
Power Dissipation
Capacitance (Note 3)
Parameter
Parameter
D
= C
V
I
V
I
I
V
I
V
I
I
0 v V
0 v V
V
V
OH
OH
OH
OL
OL
OL
PD
IN
IN
IN
IN
IN
OUT
Conditions
= 50 mA
= 4 mA
= 8 mA
= V
= V
= V
= V
= 3.4 V
= -50 mA
= -4 mA
= -8 mA
• V
3.0 to 3.6
4.5 to 5.5
= 5.5 V
IN
IN
V
IH
IH
IH
IH
CC
CC
v 5.5 V
v V
(Input t
5.0
or V
or V
or V
or V
2
(V)
• f
CC
IL
IL
IL
IL
in
r
+ I
= t
CC
http://onsemi.com
C
C
C
C
f
Condition
= 3.0 ns)
4.5 to 5.5
4.5 to 5.5
L
L
L
L
V
0 to 5.5
• V
Test
= 15 pF
= 50 pF
= 15 pF
= 50 pF
NLU1GT32
CC
3.0
3.0
3.0
4.5
3.0
4.5
3.0
4.5
3.0
4.5
5.5
5.5
0.0
CC.
(V)
CC(OPR)
3
2.58
3.94
Min
Min
1.4
2.0
2.9
4.4
= C
T
T
A
A
PD
= 25 5C
= 25 5C
Typ
Typ
3.0
4.5
4.8
6.1
3.7
4.4
5.5
11
0
0
• V
CC
• f
Max
0.53
0.36
0.36
±0.1
1.35
Max
11.4
0.8
0.1
0.1
2.0
0.5
7.9
5.5
7.5
10
in
+ I
CC
2.48
3.80
Min
Min
T
1.4
2.0
2.9
4.4
T
. C
A
A
= +855C
= +855C
PD
is used to determine the no-load
Max
0.53
0.44
0.44
±1.0
1.50
Max
13.0
0.8
0.1
0.1
5.0
9.5
6.5
8.5
20
10
2.34
3.66
Min
Min
T
1.4
2.0
2.9
4.4
T
to +1255C
to +1255C
A
A
= -555C
= -555C
Max
0.53
0.52
0.52
±1.0
1.65
Max
15.5
10.0
10.0
11.5
0.8
0.1
0.1
8.0
40
10
Unit
Unit
mA
mA
mA
mA
pF
pF
ns
V
V
V
V