is42s16800b-6tli Integrated Silicon Solution, Inc., is42s16800b-6tli Datasheet - Page 14

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is42s16800b-6tli

Manufacturer Part Number
is42s16800b-6tli
Description
16meg X 8, 8meg X16 128-mbit Synchronous Dram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
DC RECOMMENDED OPERATING CONDITIONS
Symbol
ABSOlUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
IS42S81600B, IS42S16800B
14
Symbol
V
V
V
V
P
I
T
T
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Symbol
C
C
CI/O
cs
opr
ih
il
out
stg
dd max
ddq max
in
d max
in1
in2
V
V
V
V
(min) = -1.2V (
(max) = V
ddq
ih
il
dd
(1)
(2)
ddq
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance:I/Os
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
+1.2V (
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
pulse width
pulse width
< 3
ns
).
< 3
ns
).
(1)
(At T
Integrated Silicon Solution, Inc. — www.issi.com —
a
= 0 to +25°C, V
Com.
Ind.
Min.
-1.2
3.0
3.0
2.0
Min.
2.5
2.5
4.0
–1.0 to V
–0.5 to V
Typ.
dd
–0.5 to +4.6
–0.5 to +4.6
–65 to +150
3.3
3.3
–40 to +85
0 to +70
Rating
= V
50
1
ddq
ddq
dd
+ 0.5
+ 0.5
= 3.3 ± 0.3V)
V
ddq
Max.
+0.8
3.6
3.6
3.5
3.8
6.5
-6
+ 1.2
Max.
Unit
mA
°C
°C
W
V
V
V
V
-7/-75E
Unit
4.0
5.0
6.5
V
V
V
V
1-800-379-4774
Unit
pF
pF
pF
12/06/07
Rev. F

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