mt29f4g08aaa Micron Semiconductor Products, mt29f4g08aaa Datasheet - Page 13
mt29f4g08aaa
Manufacturer Part Number
mt29f4g08aaa
Description
4gb, 8gb, And 16gb X8 Nand Flash Memory
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT29F4G08AAA.pdf
(81 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
mt29f4g08aaa-WP-A
Manufacturer:
MIC
Quantity:
11 200
Company:
Part Number:
mt29f4g08aaaWP:A
Manufacturer:
AMP
Quantity:
1 670
Array Organization
Figure 6:
Cache Register
Table 3:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
Cycle
First
Second
Third
Fourth
Fifth
Data Register
2,048 blocks
4,096 blocks
per device
per plane
Array Addressing: MT29F4G08AAA and MT29F8G08DAA
Array Organization for MT29F4G08AAA and MT29F8G08DAA (x8)
(0, 2, 4, 6, ..., 4,092, 4,094)
even-numbered blocks
BA15
LOW
LOW
I/O7
CA7
BA7
Notes:
Notes:
Plane of
2,048
2,048
1 block
1. For the 8Gb MT29F8G08DAA, the 4Gb array organization shown applies to each chip enable
1. Block address concatenated with page address = actual page address. CAx = column
2. If CA11 is “1,” then CA[10:6] must be “0.”
BA14
(CE# and CE2#).
LOW
LOW
address; PAx = page address; BAx = block address.
I/O6
CA6
BA6
2,112 bytes
64
64
(1, 3, 5, 7, ..., 4,093, 4,095)
BA13
LOW
LOW
I/O5
CA5
PA5
odd-numbered blocks
2,048
2,048
1 block
Plane of
2,112 bytes
BA12
LOW
LOW
I/O4
CA4
PA4
13
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
64
64
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CA11
BA11
LOW
I/O3
CA3
PA3
1 page
1 block
1 plane
1 device = 2,112Mb x 2 planes
I/O0
I/O7
= (2K + 64 bytes)
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
= (128K + 4K) bytes x 2,048 blocks
= 2,112Mb
= 4,224Mb
CA10
BA10
LOW
I/O2
CA2
PA2
©2006 Micron Technology, Inc. All rights reserved.
Array Organization
BA17
I/O1
CA1
CA9
BA9
PA1
BA16
I/O0
CA0
CA8
BA8
PA0