mt29f4g16abcwc-et Micron Semiconductor Products, mt29f4g16abcwc-et Datasheet

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mt29f4g16abcwc-et

Manufacturer Part Number
mt29f4g16abcwc-et
Description
Nand Flash And Mobile Lpdram
Manufacturer
Micron Semiconductor Products
Datasheet
NAND Flash and Mobile LPDRAM
152-Ball Package-on-Package (PoP)
Combination Memory (TI OMAP™)
MT29C Family
Current production part numbers: See Table 1 on page 3
Features
• Micron
• RoHS-compliant, “green” package
• Separate NAND Flash and Mobile LPDRAM
• Space-saving package-on-package combination
• Low-voltage operation (1.70–1.95V)
• Industrial temperature range: –40°C to +85°C
NAND Flash-Specific Features
• Organization
Mobile LPDRAM-Specific Features
• No external voltage reference required
• No minimum clock rate requirement
• 1.8V LVCMOS-compatible inputs
• Programmable burst lengths
• Partial-array self refresh (PASR)
• Deep power-down (DPD) mode
• Selectable output drive strength
• STATUS REGISTER READ (SRR) supported
PDF: 09005aef8326e5ac / Source: 09005aef8326e59a
152ball_ nand_lpdram_j4xx_omap.fm - Rev. E 4/09 EN
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
– Page size
– Block size: 64 pages (128K + 4K bytes)
components
interfaces
x8: 2112 bytes (2048 + 64 bytes)
x16: 1056 words (1024 + 32 words)
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
®
NAND Flash and Mobile LPDRAM
152-Ball NAND Flash and Mobile LPDRAM PoP (TI OMAP) MCP
1
1
Figure 1:
Notes: 1. Contact factory for remapped SRR output.
Options
• LP-DRAM
NAND Flash
Power
LP-DRAM Power
166 MHz CL3
133 MHz CL3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. CL = CAS (READ) latency.
PoP Block Diagram
2
NAND Flash
LP-DRAM
Device
Device
©2008 Micron Technology, Inc. All rights reserved.
LP-DRAM Interface
NAND Flash
Interface
Preliminary
Marking
Features
-75
-6

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mt29f4g16abcwc-et Summary of contents

Page 1

... NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP™) MT29C Family Current production part numbers: See Table 1 on page 3 Features ® • Micron NAND Flash and Mobile LPDRAM components • RoHS-compliant, “green” package • Separate NAND Flash and Mobile LPDRAM interfaces • ...

Page 2

Part Numbering Information – 152-Ball PoP Micron NAND Flash and LPDRAM devices are available in different configurations and densities. Figure 2: 152-Ball Part Number Chart MT 29C 1G 24M Micron Technology Product Family 29C = NAND + LPDRAM MCP NAND ...

Page 3

... MT46H16M32LFCM-6 IT MT46H16M32LFCM-6 IT Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 Device Marking Physical Part LPDDR Product Marking MT29F4G16ABCWC-ET JW399 MT29F4G16ABCWC-ET JW400 MT29F4G16ABCWC-ET JW297 MT29F4G16ABCWC-ET JW296 MT29F1G16ABBHC-ET JW226 MT29F1G16ABBHC-ET JW227 MT29F2G16ABDHC-ET JW188 MT29F2G16ABDHC-ET JW189 MT29F1G08ABCHC-ET JW385 MT29F1G08ABCHC-ET JW384 MT29F1G16ABCHC-ET ...

Page 4

... MCP. These products target mobile applications with low-power, high-performance, and minimal package-footprint design requirements. The NAND Flash and Mobile LPDRAM devices are also members of the Micron discrete memory products portfolio. The NAND Flash and Mobile LPDRAM devices are packaged with separate interfaces (no shared address, control, data, or power balls) ...

Page 5

Ball Assignments and Descriptions Figure 3: 152-Ball VFBGA Ball Assignments (NAND x8; LPDDR x16 LDM DQ5 DQ7 DDQ DQ1 DDQ SSQ ...

Page 6

Figure 4: 152-Ball VFBGA Ball Assignments (NAND x16; LPDDR x32 DM1 DQ13 DQ15 DDQ DQ6 DQ7 V DQ9 DDQ C V DQS0 SSQ DQ3 DQ5 D E ...

Page 7

Table 2: x8/x16 NAND Ball Descriptions Symbol Type ALE Input Address latch enable: When ALE is HIGH, addresses can be transferred to the on-chip address register. CE1#, CE0# Input Chip enable: Gates transfers between the host system and the NAND ...

Page 8

Table 3: x16/x32 LPDDR Ball Descriptions Symbol Type A[14:0] Input Address inputs: Specifies the row or column address. Also used to load the mode registers. The maximum LPDDR address is determined by density and configuration. Consult the LPDDR product data ...

Page 9

Electrical Specifications Table 5: Absolute Maximum Ratings Parameters/Conditions relative to V Voltage on any pin relative to V Storage temperature range Notes: 1. Supply voltage references either V Stresses greater than those listed under “Absolute Maximum ...

Page 10

Device Diagrams Figure 5: 152-Ball Functional Block Diagram (Single LPDDR) LOCK CKE0 RAS# CAS# Address, BA0, BA1 PDF: 09005aef8326e5ac / Source: 09005aef8326e59a 152ball_ nand_lpdram_j4xx_omap.fm - Rev. E 4/09 EN 152-Ball NAND Flash and Mobile LPDRAM PoP (TI OMAP) MCP CE0# ...

Page 11

Figure 6: 152-Ball Functional Block Diagram (Dual LPDDR) CS0#, CS1# CKE0, CKE1 Address, BA0, BA1 PDF: 09005aef8326e5ac / Source: 09005aef8326e59a 152ball_ nand_lpdram_j4xx_omap.fm - Rev. E 4/09 EN 152-Ball NAND Flash and Mobile LPDRAM PoP (TI OMAP) MCP CE0# CLE ALE ...

Page 12

Package Dimensions Figure 7: 152-Ball VFBGA (Package Code: CA) Seating plane A 0.12 A 152X Ø0.45 Solder ball material: SAC105. Dimensions apply to solder balls post- reflow on Ø0.35 SMD ball pads ...

Page 13

Figure 8: 152-Ball VFBGA (Package Code: CG) Seating plane A 0.1 A 152X Ø0.46 Solder ball material: SAC105. Dimensions apply to solder balls post- reflow on Ø0. ...

Page 14

Figure 9: 152-Ball TFBGA (Package Code: JQ) Seating plane A 0.12 A 152X Ø0.45 Solder ball material: SAC105. Dimensions apply to solder balls post- reflow on Ø0. ...

Page 15

Revision History Rev. E, Preliminary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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