cy62146e Cypress Semiconductor Corporation., cy62146e Datasheet - Page 5

no-image

cy62146e

Manufacturer Part Number
cy62146e
Description
4-mbit 256k X 16 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
cy62146eLL-45ZSXA
Manufacturer:
CYPRESS
Quantity:
95
Part Number:
cy62146eLL-45ZSXA
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
cy62146eLL-45ZSXI
Manufacturer:
WESTCODE
Quantity:
1 200
Part Number:
cy62146eV30L-45ZSXA
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
cy62146eV30L-45ZSXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
cy62146eV30LL-45BVXI
Manufacturer:
ST
Quantity:
149
Part Number:
cy62146eV30LL-45BVXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
cy62146eV30LL-45BVXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
cy62146eV30LL-45BVXI
Quantity:
20
Part Number:
cy62146eV30LL-45BVXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
cy62146eV30LL-45ZSXI
Manufacturer:
CY
Quantity:
6
Part Number:
cy62146eV30LL-45ZSXI
Manufacturer:
CYPRESS46
Quantity:
50
Part Number:
cy62146eV30LL-45ZSXI
Manufacturer:
CY
Quantity:
1 000
Part Number:
cy62146eV30LL-45ZSXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
cy62146eV30LL-45ZSXIT
Quantity:
154
Part Number:
cy62146eV30LL-55ZSXI
Manufacturer:
CY
Quantity:
1 000
Switching Characteristics
Over the Operating Range
Notes
Document Number: 001-07970 Rev. *D
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
9. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns (1V/ns) or less, timing reference levels of 1.5V, input pulse levels
10. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See
11. At any temperature and voltage condition, t
12. t
13. The internal write time of the memory is defined by the overlap of WE, CE = V
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
BW
SD
HD
HZWE
LZWE
Parameter
of 0 to 3V, and output loading of the specified I
signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
HZOE
, t
HZCE
, t
[13]
HZBE
, and t
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to LOW-Z
OE HIGH to High-Z
CE LOW to Low-Z
CE HIGH to High-Z
CE LOW to Power Up
CE HIGH to Power Down
BLE/BHE LOW to Data Valid
BLE/BHE LOW to Low-Z
BLE/BHE HIGH to HIGH-Z
Write Cycle Time
CE LOW to Write End
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
BLE/BHE LOW to Write End
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z
WE HIGH to Low-Z
HZWE
[9, 10]
transitions are measured when the outputs enter a high-impedance state.
[11]
HZCE
[11]
[11, 12]
[11, 12]
[11, 12]
[11]
OL
is less than t
/I
OH
[11]
as shown in
[11, 12]
Description
LZCE
, t
AC Test Loads and Waveforms on page
HZBE
is less than t
IL
, BHE, BLE or both = V
LZBE
, t
HZOE
is less than t
IL
. All signals must be active to initiate a write and any of these
4.
45 ns (Ind’l/Auto-A)
LZOE
application note AN13842
Min
45
10
10
45
35
35
35
35
25
10
5
0
5
0
0
0
, and t
HZWE
CY62146E MoBL
is less than t
Max
45
45
22
18
18
45
22
18
18
for further clarification.
LZWE
for any device.
Page 5 of 11
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
[+] Feedback
[+] Feedback

Related parts for cy62146e