cy62157ev30 Cypress Semiconductor Corporation., cy62157ev30 Datasheet - Page 5

• Manufacturer Part Number: cy62157ev30
• Description: 8-mbit 512k X 16 Static Ram
• Manufacturer: Cypress Semiconductor Corporation.

Document #: 38-05445 Rev. *E
Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Over the Operating Range
Data Retention Waveform
Notes
Parameter
V
I
t
t
11. Full device operation requires linear V
12. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
CCDR
CDR
R
Parameter
DR
[11]
Θ
Θ
BHE.BLE
[10]
JC
JA
[9]
CE
V
CE
1
CC
or
or
2
Parameters
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
OUTPUT
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
CC
INCLUDING
R
V
for Data Retention
R1
R2
V
SCOPE
TH
TH
JIG AND
Description
Description
CC
30 pF
[10]
R1
CC
[12]
ramp from V
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
V
CE
V
R2
CC
t
Figure 1. AC Test Loads and Waveforms
CC(min)
2
CDR
= 1.5V, CE
< 0.2V , V
Figure 2. Data Retention Waveform
DR
Rise Time = 1 V/ns
Test Conditions
to V
16667
15385
8000
CC(min)
2.5V
1.20
IN
1
GND
> V
V
> V
CC
> 100 µs or stable at V
Equivalent to:
CC
CC
DATA RETENTION MODE
– 0.2V or V
– 0.2V,
Conditions
10%
OUTPUT
V
DR
> 1.5V
ALL INPUT PULSES
IN
90%
CC(min)
< 0.2V
THÉ VENIN EQUIVALENT
BGA
8.86
72
> 100 µs.
1554
3.0V
1103
1.75
645
Ind’l/Auto-A
R
TH
TSOP I
CY62157EV30 MoBL
74.88
90%
8.6
10%
V
Fall Time = 1 V/ns
CC(min)
V
t
R
TH
Min
t
1.5
RC
0
TSOP II
76.88
13.52
Typ
2
[2]
Unit
Page 5 of 14
Ω
Ω
Ω
V
Max Unit
5
°C/W
°C/W
Unit
µA
ns
ns
V
®
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