cy62167dv30 Cypress Semiconductor Corporation., cy62167dv30 Datasheet - Page 2

• Manufacturer Part Number: cy62167dv30
• Description: 16-mbit 1m X 16 Static Ram
• Manufacturer: Cypress Semiconductor Corporation.

Document #: 38-05328 Rev. *G
Notes:
Product Portfolio
Pin Configuration
CY62167DV30LL
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
3. NC pins are not connected on the die.
4. DNU pins have to be left floating.
5. Ball H6 for the FBGA package can be used to upgrade to a 32M density.
6. The BYTE pin in the 48-TSOP I package has to be tied to V
SRAM by tying the BYTE signal to V
Product
[3, 4, 5]
Min.
2.2
V
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
CE2
DNU
BHE
BLE
A18
A17
A7
A6
A5
A4
A3
A2
A1
SS
CC
. In the 2M x 8 configuration, Pin 45 is A20, while BHE, BLE and I/O8 to I/O14 pins are not used (DNU).
Typ.
Range (V)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
3.0
[2]
48-Pin TSOP I (Forward) (1M x 16/ 2M x 8)
Max.
BLE
I/O
3.6
V
V
I/O
I/O
I/O
A
SS
CC
1
CC
18
14
8
9
15
to use the device as a 1M X 16 SRAM. The 48-TSOPI package can also be used as a 2M X 8
BHE
I/O
I/O
I/O
I/O
OE
A
A
2
19
8
10
11
12
13
Speed
48-ball VFBGA
(ns)
45
55
70
DNU
Top View
A
Top View
A
A
A
A
A
A
3
17
14
12
0
3
5
9
A
A
A
A
A
A
A
A
4
15
13
10
Typ.
1
4
7
16
6
2
f = 1MHz
CE
I/O
I/O
I/O
I/O
WE
[2]
A
A
5
11
2
1
3
4
5
1
Operating I
Vcc
Vss
DNU
CE
I/O
I/O
I/O
I/O
Max.
6
0
2
6
4
2
7
B
C
D
E
F
G
H
A
[6]
Power Dissipation
Typ.
CC
18.5
CY62167DV30 MoBL
15
12
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
(mA)
CC
f = f
[2]
A16
BYTE
Vss
I/O15/A20
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
Vcc
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
Vss
CE1
A0
= V
Max
CC(typ.)
Max.
37
30
25
, T
A
= 25°C.
Standby I
Typ.
2.5
[2]
Page 2 of 12
SB2
Max.
22
(µA)
®
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