lh28f640sp Sharp Microelectronics of the Americas, lh28f640sp Datasheet - Page 5

• Manufacturer Part Number: lh28f640sp
• Description: Flash Memory 64mbit 4mbitx16
• Manufacturer: Sharp Microelectronics of the Americas

The product, which is Page Mode Flash memory, is a high density, low cost, nonvolatile read/write storage solution for a
wide range of applications. The product can operate at V
The product supports high performance page mode. It allows code execution directly from Flash, thus eliminating time
consuming wait states.
Fast program capability is provided through the use of high speed Page Buffer Program.
The block locking scheme is available for memory array and this scheme provides maximum flexibility for safe nonvolatile
code and data storage.
OTP (One Time Program) block provides an area to store security code and to protect its code.
* ETOX is a trademark of Intel Corporation.
• Bit Organization ×8/×16
for Memory Array
• 120/25ns 4-Word/ 8-Byte Page Mode
• V
• Automatic Power Savings Mode reduces I
• 4-Word/ 8-Byte Factory-Programmed Area
• 3963-Word/ 7926-Byte User-Programmable Area
• 16-Word/ 32-Byte Page Buffer
• Page Buffer Program Time 12.5µs/byte (Typ.)
• Sixty-four 64-KWord/ 128-KByte Blocks
64-Mbit Density
High Performance Page Mode Reads
V
OTP (One Time Program) Block
High Performance Program with Page Buffer
Operating Temperature -40°C to +85°C
Symmetrically-Blocked Architecture
CC
in Static Mode
CCQ
=2.7V-3.6V Operation
for Input/Output Power Supply Isolation
Page Mode Flash MEMORY
64Mbit (4Mbit×16/8Mbit×8)
LH28F640SPHT-PTLZ8
CCR
LHF64PZ8
CC
=2.7V-3.6V and V
• Individual Block Lock
• Absolute Protection with V
• Block Erase, (Page Buffer) Program Lockout during
• Program Time 210µs (Typ.)
• Block Erase Time 1s (Typ.)
• Basic Command Set
• Common Flash Interface (CFI)
• Minimum 100,000 Block Erase Cycles
Enhanced Data Protection Features
Automated Erase/Program Algorithms
Cross-Compatible Command Support
Extended Cycling Capability
56-Lead TSOP (Normal Bend)
CMOS Process (P-type silicon substrate)
ETOX
Not designed or rated as radiation hardened
Power Transitions
TM*
PEN
Flash Technology
=2.7V-3.6V
PEN
≤V
PENLK
Rev. 0.06
2