m29f016b70n6t STMicroelectronics, m29f016b70n6t Datasheet
m29f016b70n6t
Related parts for m29f016b70n6t
m29f016b70n6t Summary of contents
Page 1
... Mbit (2Mb x8, Uniform Block) Single Supply Flash Memory SINGLE 5V 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – Byte typical 32 UNIFORM 64 Kbyte MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – ...
Page 2
M29F016B Figure 2. TSOP Connections A19 1 40 A18 A17 A16 A15 A14 A13 A12 M29F016B A11 A10 AI02969 Table 1. Signal Names ...
Page 3
... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi- tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual- ity documents. ...
Page 4
... Names, for a brief overview of the signals connect- Group ed to this device. Address Inputs (A0-A20). The Address Inputs select the cells in the memory array to access dur- 7 ing Bus Read operations. During Bus Write opera- tions they control the commands sent to the Command Interface of the internal state machine. ...
Page 5
... These are Bus Read, Bus Write, Out- put Disable, Standby and Automatic Standby. See Table 4, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not af- fect bus operations. Table 4. Bus Operations Operation ...
Page 6
... Code can be read using a Bus Read operation with and may be set to either V IL Code for STMicroelectronics is 20h. The Device Code can be read using a Bus Read operation with address bits may be set to either V Device Code for the M29F016B is ADh. ...
Page 7
... Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional Bus Writ e Operations until the Timeout Bit is set. ...
Page 8
... Bus Write operation. Once the Program/Erase Table 6. Program, Erase Times and Program, Erase Endurance Cycles ( – –40 to 125 C) A Parameter Chip Erase (All bits in the memory set to ‘0’) Chip Erase Block Erase (64 Kbytes) Program Chip Program Program/Erase Cycles (per Block) Note: 1 ...
Page 9
... The Program/Erase Controller will suspend within the Erase Suspend Command being is- sued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend command is issued during the period when the memory is waiting for an additional block (before ...
Page 10
... DQ5 at ‘1’. In both cases, a successive Bus Read operation will show the bit is still ‘0’. One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. DQ7 ...
Page 11
... Bus Read operations from addresses within the blocks being erased. Bus Read operations to ad- dresses within blocks not being erased will output the memory cell data Read mode. After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be used to ...
Page 12
M29F016B Table 8. AC Measurement Conditions Parameter AC Test Conditions Load Capacitance ( Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 6. AC Testing Input Output Waveform High Speed 3V 0V ...
Page 13
Table 10. DC Characteristics ( – –40 to 125 C) A Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current ...
Page 14
M29F016B Table 11. Read AC Characteristics ( – –40 to 125 C) Symbol Alt Parameter t t Address Valid to Next Address Valid AVAV Address Valid to Output ...
Page 15
Table 12. Write AC Characteristics, Write Enable Controlled ( – –40 to 125 C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Chip Enable ...
Page 16
M29F016B Table 13. Write AC Characteristics, Chip Enable Controlled ( – –40 to 125 C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Write ...
Page 17
Table 14. Reset/Block Temporary Unprotect AC Characteristics ( – –40 to 125 C) A Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable t t PHEL RH ...
Page 18
... Note: The last two characters of the ordering code may be replaced by a letter code for preprogrammed parts, otherwise devices are shipped from the factory with the memory content bits erased to ‘1’. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de- vice, please contact the ST Sales Office nearest to you ...
Page 19
Table 16. Revision History Date July 1999 First Issue New document template Document type: from Preliminary Data to Data Sheet Status Register bit DQ5 clarification Data Polling Flowchart diagram change (Figure 4) Data Toggle Flowchart diagram change (Figure 5) 03/30/00 ...
Page 20
M29F016B Table 17. TSOP40 - 40 lead Plastic Thin Small Outline 20mm, Package Mechanical Data mm Symbol Typ Min A A1 0.05 A2 0.95 B 0.17 C 0.10 D 19.80 D1 18.30 E 9.90 e 0.50 – L ...
Page 21
Table 18. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data mm Symbol Typ Min A 2.42 A1 0. 0.10 D 28.10 E 13.20 e 1.27 – H 15.90 L 0.80 ...
Page 22
... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics ...