br9016 ROHM Co. Ltd., br9016 Datasheet
br9016
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br9016 Summary of contents
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... BR9080 / BR9080F / BR9080RFV / BR9016 / BR9016F / BR9016RFV The BR9080 and BR9016 series are serial EEPROMs that can be connected directly to a serial port and can be erased and written electrically. Writing and reading is performed in word units, using four types of operation commands. Communication occurs though CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling these EEPROMs to be used as one-time ROMs ...
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... Reduced by 3.5mW for each increase over Reduced by 3.0mW for each increase over 25 C. Recommended operating conditions (Ta=25 C) Parameter Symbol WRITE Power supply voltage READ Input voltage BR9080 / BR9080F / BR9080RFV / BR9016 / BR9016F / BR9016RFV WC GND BR9016F : SOP8 Fig ...
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... Memory ICs Electrical characteristics BR9080 / F / RFV, BR9016 / F / RFV: 5V (Unless otherwise noted, Ta Parameter Symbol Min. V Input low level voltage 1 IL1 0 Input high level voltage 1 IH1 V Input low level voltage 2 IL2 V 0.8 V Input high level voltage 2 IH2 V 0 Output low level voltage ...
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... Memory ICs Operating timing characteristics BR9080 / F / RFV, BR9016 / F / RFV (Unless otherwise noted, Ta Parameter CS setup time CS hold time Data setup time Data hold time DO rise delay time DO fall delay time Self-timing programming cycle CS minimum high level time READY / BUSY display valid time ...
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... WC High or LOW 1) When CS is “HIGH” during power up, BR9080 / F / RFV, BR9016 / F / RFV comes up in the erase / write disabled (EWDS) state. In order to be programmable, it must receive an enable (EWEN) instruction. The device remains programmable until a disable (EWDS) instruction is entered, or until it is powered down. ...
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... Fig.4 BR9080 / F / RFV Read Data (n) Fig.5 BR9016 / F / RFV , t because of internal circuit delay following the falling edge of the SK signal. PD1 time should be assured before data is read, to avoid the previous data being lost STANDBY HIGH-Z D15 D0 D15 ...
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... If WC becomes “HIGH” during Write Cycle, the write operation is halted. In this case, the address data in writing is no guaranteed necessary to rewrite it. BR9080 / BR9080F / BR9080RFV / BR9016 / BR9016F / BR9016RFV Fig.6 BR9080 / F / RFV Fig.7 BR9016 / F / RFV D15 HIGH E-W t WCH D15 HIGH E-W t WCH ). SV ...
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... Memory ICs (5) READY / BUSY display ( pin and DO pin: BR9080 / F / RFV, BR9016 / F / RFV) 1) This display outputs the internal status signal; the pin outputs the HIGH or LOW status at all times. The display can also be output from the DO pin. Following completion of the writing command falls while SK is LOW, either HIGH or LOW is output ...
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... During a writing operation, noise at the WC pin can be erroneously judged to be data, and this can cause writing to be forcibly interrupted noise CC Noise and surges on the power supply line can cause malfunction. We recommend installing a bypass capacitor between the power supply and ground to eliminate this problem. BR9080 / BR9080F / BR9080RFV / BR9016 / BR9016F / BR9016RFV ). Good example Bad example Fig.9 ...
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... The data in the designated address is not guaranteed and should be written once again set to HIGH while the signal is HIGH (following the t the next command to be input. BR9080 / BR9080F / BR9080RFV / BR9016 / BR9016F / BR9016RFV 32 Clock Address 4 bits 8 bits ...
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... Memory ICs External dimension (Units : mm) BR9080 BR9016 9.3 ± 0 2.54 0.5 ± 0 DIP8 BR9080RFV BR9016RFV 3.0 0 0.22 0.1 0.3Min. (0.52) 0.65 SSOP-B8 BR9080 / BR9080F / BR9080RFV / BR9016 / BR9016F / BR9016RFV BR9080F BR9016F 7.62 0.1 5.0 ± 0 1.27 0.4 ± 0.1 0.3Min. 0.15 SOP8 ...