m5m5w816 Renesas Electronics Corporation., m5m5w816 Datasheet - Page 3

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m5m5w816

Manufacturer Part Number
m5m5w816
Description
8388608-bit 524288-word By 16-bit Cmos Static Ram
Manufacturer
Renesas Electronics Corporation.
Datasheet

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2002.04.18
FUNCTION
M5M5W816WG - 55HI, 70HI, 85HI
These dev ices operate on a single +2.7~3.6V power supply ,
and are directly TTL compatible to both input and output. Its
f ully static circuit needs no clocks and no ref resh, and
makes it usef ul.
the dev ice control inputs BC1# , BC2# , S1#, S2 , W# and
OE#. Each mode is summarized in the f unction table.
ov erlaps with the low lev el BC1# and/or BC2# and the low
lev el S1# and the high lev el S2. The address(A0~A18) must
be set up bef ore the write cy c le and must be stable during
the entire cycle.
and OE# at a low lev el while BC1# and/or BC2# and S1# and
S2 are in an activ e state(S1#=L,S2=H).
an activ e stage , upper-by t e are in a selectable mode in
which both reading and writing are enabled, and lower-by t e
are in a non-selectable mode. And when setting BC2# at a
high lev el and other pins are in an activ e stage, lower-by t e
are in a selectable mode and upper-by te are in a non-
selectable mode.
BLOCK DIAGRAM
The M5M5W816WG is organized as 524288-words by 16-bit.
A read operation is executed by s etting W# at a high lev el
A write operation is executed whenev er the low lev el W#
When setting BC1# at the high lev el and other pins are in
The operation mode are determined by a combination of
BC2#
BC1#
OE#
S1#
A
W#
A
S2
A
A
18
17
0
1
Ver. 6.0
MEMORY ARRAY
524288 WORDS
x 16 BITS
GENERATOR
CLOCK
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
(note1) "H" and "L" in this table mean V
(note2) "X" in this table should be "H" or "L".
lev el or S2 at a low lev el, the chips are in a non-selectable
mode in which both reading and writing are disabled. In this
mode, the output stage is in a high-impedance state, allowing
OR-tie with other chips and memory expansion by BC1#,
BC2# and S1#, S2.
ty pical), and the memory data can be held at +2.0V power
supply , enabling battery back-up operation during power
f ailure or power-down operation in the non-selected mode.
FUNCTION TABLE
When setting BC1# and BC2# at a high lev el or S1# at a high
S1#
The power supply c urrent is reduced as low as 0.1µA(25°C,
H
L
H
X
L
L
L
L
L
L
L
L
L
S2
L
L
H
X
H
H
H
H
H
H
H
H
H
BC1# BC2#
X
X
X
H
L
H
H
L
L
H
L
L
L
-
X
X
X
H
H
H
H
L
L
L
L
L
L
W#
X
X
X
X
L
H
H
L
H
H
L
H
H
OE#
X
X
X
X
X
H
H
L
X
L
X
L
H
Non selection
Non selection
Non selection
Non selection
Mode
Write
Read
Write
Read
Write
Read
DQ1~8
High-Z
High-Z
High-Z
High-Z High-Z
High-Z High-Z
High-Z
High-Z
High-Z
High-Z
IH
Din
Dout
Din
Dout
and V
MITSUBISHI LSIs
GND
Vcc
DQ
DQ
DQ
DQ
16
DQ9~16
High-Z Standby
High-Z Standby
High-Z Standby
High-Z
High-Z
High-Z
High-Z
1
8
9
IL,
Din
Dout
Din
Dout
respectiv ely .
Standby
Activ e
Activ e
Activ e
Activ e
Activ e
Activ e
Activ e
Activ e
Activ e
Icc
2

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