ht6256dc Honeywell International's Solid State Electronics Center (SSEC), ht6256dc Datasheet
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ht6256dc
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ht6256dc Summary of contents
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... GENERAL DESCRIPTION The 32K x 8 High Temperature Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality fabri- cated with Honeywell’s HTMOS™ technology, and is designed for use in systems operating in severe high temperature environments. ...
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... NOE A:9-11 SIGNAL DEFINITIONS A: 0-14 Address input pins which select a particular eight-bit word within the memory array. DQ: 0-7 Bidirectional data pins which serve as data outputs during a read operation and as data inputs during a write operation. NCS Negative chip select, when at a low level allows normal read or write operation. When at a high level NCS forces the SRAM to a precharge condition, holds the data output drivers in a high impedance state and disables all input buffers ...
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ABSOLUTE MAXIMUM RATINGS (1) Symbol VDD Supply Voltage Range (2) VPIN Voltage on Any Pin (2) TSTORE Storage Temperature (Zero Bias) TSOLDER Soldering Temperature (5 Seconds) PD Maximum Power Dissipation (3) IOUT DC or Average Output Current VPROT ESD Input ...
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HT6256 DC ELECTRICAL CHARACTERISTICS ...
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READ CYCLE AC TIMING CHARACTERISTICS (1) Symbol Parameter TAVAVR Address Read Cycle Time TAVQV Address Access Time TAXQX Address Change to Output Invalid Time TSLQV Chip Select Access Time TSLQX Chip Select Output Enable Time TSHQZ Chip Select Output Disable ...
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HT6256 WRITE CYCLE AC TIMING CHARACTERISTICS ( ...
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DYNAMIC ELECTRICAL CHARACTERISTICS Read Cycle The RAM is asynchronous in operation, allowing the read cycle to be controlled by address, chip select (NCS), or chip enable (CE) (refer to Read Cycle timing diagram). To per- form a valid read operation, ...
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... Chip Enable (CE), call Honeywell Right Reading E on Lid Optional Capacitors (width) (pitch) HT6256DC C - Indicates screening level B = High Temperature Class Commercial and features internal 2 3 All dimensions in inches A 0.175 (max 0.018 ± 0.002 b2 ...