hm62832uh Renesas Electronics Corporation., hm62832uh Datasheet - Page 5

• Manufacturer Part Number: hm62832uh
• Description: 256 K High Speed Sram 32-kword 8-bit - Hitachi Semiconductor
• Manufacturer: Renesas Electronics Corporation.

DC Characteristics (Ta = 0 to +70 C, V
Parameter
Input leakage current
Output leakage current
Operating V
Standby V
Standby V
Output low voltage
Output high voltage
Notes: 1. Typical values are at V
Capacitance (Ta = 25 C, f = 1.0 MHz)
Parameter
Input capacitance
Output capacitance Cout
Note:
2. CS = V
3. Access time version
1. This parameter is sampled and not 100% tested.
CC
CC
CC
current
current (1)
current
IL
, Iout = 0 mA
Symbol
Cin
Symbol
|I
|I
I
I
I
I
I
I
I
V
V
CC1
CC2
CC1
CC2
SB
SB
SB1
LI
LO
OL
OH
|
|
(-15)
(-20)
(L-version) —
(-15)
(-15)
(-20)
(-20)
CC
= 5.0 V, Ta = 25 C and not guaranteed.
Min
—
—
*3
Min
—
—
—
—
—
—
—
—
—
—
2.4
*1
CC
Typ
—
—
= 5 V 10%, V
Typ
—
—
135
100
120
90
40
30
0.02
0.003
—
—
*1
Max
6
10
Max
2.0
2.0
170
120
150
110
60
50
2.0
0.1
0.4
—
SS
Unit
mA
mA
mA
mA
mA
mA
V
V
= 0 V)
A
A
Unit
pF
pF
HM62832UH Series
Test Conditions
V
Vin = V
CS = V
V
min cycle
2x min cycle
min cycle
2x min cycle
CS = V
CS
0 V
V
I
I
OL
OH
CC
I/O
CC
= 8 mA
= –4.0 mA
= 5.5 V
= V
– 0.2 V
V
Vin
Test Conditions
Vin = 0 V
V
SS
IH
SS
IH
CC
I/O
, min cycle
*2
to V
to V
– 0.2 V
= 0 V
0.2 V or
Vin
CC
CC
5