hm62g36256 Renesas Electronics Corporation., hm62g36256 Datasheet - Page 6

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hm62g36256

Manufacturer Part Number
hm62g36256
Description
8m Synchronous Fast Static Ram 256k-word X 36-bit - Hitachi Semiconductor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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HM62G36256 Series
Absolute Maximum Ratings
Parameter
Input voltage on any pin
Core supply voltage
Output supply voltage
Operating temperature
Storage temperature
Junction temperature
Output short–circuit current
Latch up current
Package junction to case thermal resistance
Package junction to ball thermal resistance
Notes: 1. All voltage is referred to V
6
2. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional
3. These CMOS memory circuits have been designed to meet the DC and AC specifications shown
4. The supply voltage application sequence need to be powered up in the following manner: V
5.
6.
7. These thermal resistance values have error of
operation should be restricted the Operation Conditions. Exposure to higher than recommended
voltages for extended periods of time could affect device reliability.
in the tables after thermal equilibrium has been established.
V
not to exceed 3.9 V, whatever the instantaneous value of V
Measurement”).
“Definition of Measurement”).
JC is measured at the center of mold surface in fluorocarbon (See Figure “Definition of
JB is measured on the center ball pad after removing the ball in fluorocarbon (See Figure
DD
, V
DDQ
, V
REF
then V
IN
. Remember, according to the Absolute Maximum Ratings table, V
Fluorocarbon
T.C.
SS
JC
.
Definition of Measurement
Symbol
V
V
V
T
T
Tj
I
I
OUT
LI
JC
JB
OPR
STG
IN
DD
DDQ
5 C/W.
T.C.
Value
–0.5 to V
–0.5 to 3.9
–0.5 to 2.2
0 to 70
–55 to 125
110
25
200
5
8
Fluorocarbon
DDQ
JB
DDQ
.
+ 0.5
Unit
V
V
V
mA
mA
C
C
C
C/W
C/W
Notes
1, 4
1
1, 4
5, 7
6, 7
DDQ
SS
is
,

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