l6599atn STMicroelectronics, l6599atn Datasheet - Page 26
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l6599atn
Manufacturer Part Number
l6599atn
Description
Improved High-voltage Resonant Controller
Manufacturer
STMicroelectronics
Datasheet
1.L6599ATN.pdf
(31 pages)
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Application information
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Equation 13
where Q
bootstrap DMOS (150 W, typ.) and T
equals about half the switching period minus the dead time T
MOSFET with a total gate charge of 30 nC, the drop on the bootstrap driver is about 3 V at a
switching frequency of 200 kHz:
Equation 14
If a significant drop on the bootstrap driver is an issue, an external ultra-fast diode can be
used, thus saving the drop on the R
g
is the gate charge of the external power MOS, R
V
V
Drop
Drop
=
=
I
2
ch
Doc ID 15534 Rev 1
5 .
arg
⋅
10
e
R
(DS)ON
charge
30
−
(
DS
6
⋅
−
)
10
on
. 0
is the ON-time of the bootstrap driver, which
of the internal DMOS.
−
+
27
9
V
⋅
F
10
=
−
T
6
ch
150
Q
arg
g
e
+
R
0
(DS)ON
(
6 .
DS
D
=
)
. For example, using a
on
2
+
7 .
is the on-resistance of the
V
V
F
L6599AT
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