ncp1582 ON Semiconductor, ncp1582 Datasheet - Page 10

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ncp1582

Manufacturer Part Number
ncp1582
Description
Low Voltage Synchronous Buck Controller
Manufacturer
ON Semiconductor
Datasheet

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Thermal Considerations
MOSFETs used, V
average MOSFET gate current typically dominates the
control IC power dissipation. The IC power dissipation is
determined by the formula:
Where:
The upper (switching) MOSFET gate driver losses are:
Where:
The lower (synchronous) MOSFET gate driver losses are:
The power dissipation of the NCP158x varies with the
P
I
V
P
P
Q
f
V
CC
SW
IC
TG
BG
CC
TG
BST
100
A
= control IC power dissipation,
= IC measured supply current,
= the switching frequency,
Figure 13. Gain Plot of the Error Amplifier
= top gate driver losses,
= bottom gate driver losses.
= IC supply voltage,
= total upper MOSFET gate charge at V
= the BST pin voltage.
P IC + (I CC @ V CC ) ) P TG ) P BG .
F
Z
Unloaded Gain
1000
Gain = GMR
Closed Loop,
P TG + Q TG @ f SW @ V BST .
P BG + Q BG @ f SW @ V CC .
CC
Compensation Network
, and the boost voltage (V
FREQUENCY (Hz)
Open Loop, Unloaded Gain
10 k
1
F
P
NCP1582
100 k
B
Figure 14. Components to be Considered for
PHASE
GND
NCP1582, NCP1582A, NCP1583
BG
TG
Error Amplifier
1000 k
BST
BST
Layout Specifications
,
http://onsemi.com
). The
RETURN
V
in
10
Where:
calculated as:
Where:
IC package.
specifications section of this data sheet and a calculation can
be made to determine the IC junction temperature. However,
it should be noted that the physical layout of the board, the
proximity of other heat sources such as MOSFETs and
inductors, and the amount of metal connected to the IC,
impact the temperature of the device. Use these calculations
as a guide, but measurements should be taken in the actual
application.
Layout Considerations
very important. Switching current from one power device to
another can generate voltage transients across the
impedances of the interconnecting bond wires and circuit
traces. These interconnecting impedances should be
minimized by using wide, short printed circuit traces. The
critical components should be located as close together as
possible using ground plane construction or single point
grounding. The figure below shows the critical power
components of the converter. To minimize the voltage
overshoot the interconnecting wires indicated by heavy lines
should be part of ground or power plane in a printed circuit
board. The components shown in the figure below should be
located as close together as possible. Please note that the
capacitors C
capacitors. It is desirable to locate the NCP158x within 1
inch of the MOSFETs, Q1 and Q2. The circuit traces for the
MOSFETs’ gate and source connections from the NCP158x
must be sized to handle up to 2 A peak current.
Q
The junction temperature of the control IC can then be
T
T
θ
The package thermal resistance can be obtained from the
As in any high frequency switching converter, layout is
JA
A
J
BG
C
= the junction temperature of the IC,
= the ambient temperature,
= the junction−to−ambient thermal resistance of the
in
= total lower MOSFET gate charge at V
L
out
IN
and C
T J + T A ) P IC @ q JA .
OUT
C
out
each represent numerous physical
V
out
C
A
D
L
CC
.

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