pssi7512 Power Semiconductors, Inc., pssi7512 Datasheet - Page 4

• Manufacturer Part Number: pssi7512
• Description: Igbt Module
• Manufacturer: Power Semiconductors, Inc.

E
E
I
CM
on
on
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
120
100
mJ
24
18
12
20
15
10
80
60
40
20
mJ
A
6
0
5
0
0
0
0 10 20 30 40 50 60 70 80 90 100
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
t
= 125°C
= 50 A
= 600 V
200
= ±15 V
d(on)
E
on
t
20
r
400
40
600
R
T
V
J
CEK
G
= 125°C
= 22
< V
60
800 1000 1200
CES
V
V
R
T
J
CE
GE
G
R
= 125°C
= 22
= 600 V
= ±15 V
I
G
C
80
t
E
d(on)
t
V
on
r
CE
100
81T120
81T120
81T120
V
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
A
120
90
60
30
0
240
180
120
60
0
ns
ns
t
t
0,00001
E
Z
E
0,0001
thJC
off
off
0,001
0,01
K/W
0,1
0,00001 0,0001
12
10
10
mJ
mJ
8
6
4
2
0
8
6
4
2
0
1
0
0 10 20 30 40 50 60 70 80 90 100
PSIG PSI PSIS PSSI 75/12
Fig. 8 Typ. turn off energy and switching
Fig. 10 Typ. turn off energy and switching
Fig. 12
V
V
I
T
C
CE
GE
J
= 125°C
= 50 A
= 600 V
= ±15 V
20
times versus collector current times
versus collector current
single pulse
times versus gate resistor times
versus gate resistor
Typ. transient thermal impedance
RBSOA
diode
40
0,001
60
IGBT
0,01
V
V
R
T
R
CE
GE
J
G
G
= 125°C
I
= 22
= 600 V
= ±15 V
C
80
t
0,1
VID...75-12P1
t
81T120
E
d(off)
100
off
t
81T120
s
E
t
d(off)
t
f
f
off
A
1
600
500
400
300
200
100
0
ns
1500
1200
900
600
300
0
ns
t
t