dld101 ETC-unknow, dld101 Datasheet - Page 2

• Manufacturer Part Number: dld101
• Description: Discrete - Led Drive Solutions
• Manufacturer: ETC-unknow

Thermal Characteristics – Total Device
Electrical Characteristics: (Q1)
Electrical Characteristics: (Q2)
Power Dissipation @T
Thermal Resistance Junction to Ambient Air @T
Thermal Resistance Junction to Case Air @T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Voltage
Output Voltage
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Notes:
Notes:
DLD101
Document number: DS32007 Rev. 7 - 2
3. Part mounted on FR-4 substrate PC board, with minimum recommended pad layout (see page 6).
4. Part mounted on FR-4 substrate PC board, 2oz Copper with 6 mm2 Cu Area, MOSFET element activated.
5. Part mounted on FR-4 substrate PC board, 2oz Copper with 35 mm2 Cu Area, MOSFET element activated.
6. Short duration pulse test used to minimize self-heating effect.
Characteristic (Note 6)
Characteristic
A
= 25°C
Characteristic
A
= 25°C
A
= 25°C
@T
@T
A
A
Symbol
R
BV
V
= 25°C unless otherwise specified
= 25°C unless otherwise specified
DS (ON)
t
t
I
I
C
V
C
C
Q
GS(th)
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
oss
DSS
iss
rss
fs
gs
gd
r
f
g
Symbol
V
R
V
V
I
O(off)
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O(on)
G
R
2
I(off)
I(on)
f
/R
T
1
1
1
Min
100
2.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2 of 9
Min
0.4
3.2
80
8
-
-
-
-
Symbol
T
J
R
R
, T
0.89
11.4
14.3
Typ
129
0.9
3.4
0.9
7.9
9.6
P
14
⎯
⎯
⎯
⎯
⎯
⎯
θ JA
θ JC
8
1
D
STG
0.05
Typ
260
4.7
10
-
-
-
-
±100
Max
0.85
0.99
4.1
1.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Max
1.5
0.3
0.5
6.2
12
-
-
-
35.5 (Note 4)
35.7 (Note 5)
178 (Note 3)
138 (Note 4)
123 (Note 5)
Unit
0.7 (Note 3)
0.9 (Note 4)
1.4 (Note 5)
30 (Note 3)
-55 to +150
μA
nA
nC
pF
pF
pF
ns
Ω
V
V
S
V
Value
MHz
Unit
μA
kΩ
V
V
V
-
-
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
D
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
= 1A, R
V
V
I
V
V
V
f = 100MHz
= 60V, V
= V
= 15V, I
= 0V, I
= 50V, V
= 50V, V
O
= ±20V, V
= 10V, I
= 6V, I
= 0V, I
= 50V, V
CC
CC
CC
O
CE
/I
I
= 5V, I
GS
= 5mA/0.25mA
= 5V, I
= 0.3V, I
= 50V, V
= 10V, I
G
, I
Test Condition
D
D
S
≈ 6Ω
D
D
Test Condition
D
= 250μA
GS
= 1A
= 1.5A
GS
GS
DS
O
= 250μA
= 1A
= 1.5A
DS
O
= 10mA
= 0V
E
= 0V
= 10V, I
= 10V,
= 100μA
O
I
= 0V
= 5mA,
= 0V
= 5mA
-
-
© Diodes Incorporated
°C/W
°C/W
Unit
DLD101
°C
W
D
March 2010
= 1A