bd8220efv ROHM Co. Ltd., bd8220efv Datasheet - Page 4

• Manufacturer Part Number: bd8220efv
• Description: Power Driver For Compact Disc Player
• Manufacturer: ROHM Co. Ltd.

○ Cautions in using the IC
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might be destroyed when the absolute maximum ratings, such as impressed voltages or the operating temperature range, is exceeded, and whether the
destruction is short circuit mode or open circuit mode cannot be specified. Please take into consideration the physical countermeasures for safety , such as fusing, if a particular
mode that exceeds the absolute maximum rating is assumed.
diode in the supply line and motor coil line.
input terminals (Vcc and GND) are recommended. Please note the electrolytic capacitor value decreases at lower temperatures and examine to dispense
physical measures for safety.
This product has exposed the frame to the back side of the package, but please note that it is assumed to use heat radiation efficiency by the heat
radiation for this part. Please take the heat radiation pattern on not only the surface of the substrate but also the back of the substrate widely.
might be destroyed when the dust short the terminals between them or GND.
The TSD is activated when the junction temperature (Tj) exceeds Tjmax, and the output terminal is switched to OPEN.
operates the TSD circuit.
charge accumulated in the capacitor flows to the output driver. Please set said capacitor to smaller than 0.1µF.
process. Moreover, when attaching or detaching from jig in the inspection process, please turn off the power before mounting the IC, and turn on after
mounting the IC, and vice versa. In addition, please take into consideration the countermeasures for electrostatic damage, such as giving the earth in
assembly process, transportation or preservation.
and N-layer of each element. For instance, the resistor or the transistor is connected to the terminal as shown in the figure below. When the GND
voltage potential is greater than the voltage potential at Terminals A on the resistor, at Terminal B on the transistor, the PN junction operates as a
parasitic diode. In addition, the parasitic NPN transistor is formed in said parasitic diode and the N layer of surrounding elements close to said
parasitic diode. These parasitic elements are formed in the IC because of the voltage relation. The parasitic element operating causes the interference
of circuit operation, then the wrong operation and destruction. Therefore, please be careful so as not to operate the parasitic elements by impressing to
input terminals lower voltage than GND (P substrate). Please do not apply the voltage to the input terminal when the power-supply voltage is
not impressed. Moreover, please impress each input terminal lower than the power-supply voltage or equal to the specified range in the guaranteed
voltage when the power-supply voltage is impressing.
not to change voltage of small signal GND, each ground terminal of IC must be connected at the one point on the set circuit board. As for GND of external
parts, it is similar to the above-mentioned.
We are careful enough for quality control about this IC. So, there is no problem under normal operation, excluding that it exceeds the absolute maximum ratings. However, this IC
And, for ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal powering sequence and delays.
Connecting the power line to the IC in reverse polarity (from that recommended) will damage the part. Please utilize the direction protection device as a
Due to return of regenerative current by reverse electromotive force, using electrolytic and ceramic suppress filter capacitors (0.1µF) close to the IC power
Therefore, give special consideration to power coupling capacitance, power wiring, width of GND wiring, and routing of wiring.
Do not exceed the power dissipation (Pd) of the package specification rating under actual operation, and please design enough temperature margins.
Do not mount the IC in the wrong direction and displacement, and be careful about the reverse-connection of the power connector. Moreover, this IC
Strong electromagnetic radiation can cause operation failures.
Do not exceed the maximum ASO and the absolute maximum ratings of the output driver.
The guarantee and protection of set are not purpose. Therefore, please do not use this IC after TSD circuit operates, nor use it for assumption that
If a large capacitor is connected between the output driver and GND, this IC might be destroyed when Vcc becomes 0V or GND, because the electric
The stress might hang to IC by connecting the capacitor to the terminal with low impedance. Then, please discharge electricity in each and all
This IC is a monolithic IC, and has P
If small signal GND and large current GND exist, disperse their pattern. In addition, for voltage change by pattern wiring impedance and large current
Absolute maximum ratings
Reverse polarity connection
Power supply line
GND line
Thermal design
Short circuit mode between terminals and wrong mounting
Radiation
ASO (Area of Safety Operation)
TSD (Thermal Shut-Down)
Capacitor between output driver and GND
Inspection by the set circuit board
Input terminal
Earth wiring pattern
Please keep the GND line the lowest potential always, and check the GND voltage when transient voltages are connected to the IC.
Terminal-A
Parasitic
element
P
+
+
isolation and P substrate for the element separation. Therefore, a parasitic PN junction is firmed in this P-layer
GND
P
Resistor
P-Substrate
P
+
Simplified structure of IC
Terminal-A
Parasitic
element
Terminal-B
REV. A
Parasitic
element
P
+
C
B
Transistor(NPN)
E
GND
P
P-Substrate
P
+
GND
Terminal-B
Surrounding
elements
B
C
E
Parasitic
GND
element
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