bts3205 Infineon Technologies Corporation, bts3205 Datasheet - Page 7

• Manufacturer Part Number: bts3205
• Description: Smart Low-side Power Switch Hitfet
• Manufacturer: Infineon Technologies Corporation

4
4.1
Absolute Maximum Ratings
T
(unless otherwise specified)
Pos.
Voltages
4.1.1
4.1.2
4.1.3
4.1.4
4.1.5
Energies
4.1.6
4.1.7
4.1.8
4.1.9
4.1.10
Temperatures
4.1.11
4.1.12
ESD Susceptibility
4.1.13
1) Not subject to production test, specified by design.
2) Active clamped.
3) Internally limited.
4) Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with buried
5) ESD susceptibility HBM according to EIA/JESD 22-A 114B, section 4.
Data Sheet
j
= -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
planes). PCB is mounted vertical without blown air.
Parameter
Drain voltage
Input Voltage
Input Current
Drain Current
Unclamped single pulse inductive energy
single pulse
Unclamped single pulse inductive energy
single pulse
Unclamped repetitive pulse inductive
energy 1×10
Unclamped repetitive pulse inductive
energy 1×10
Total Power Dissipation
Operating temperature
Storage temperature
Electrostatic discharge voltage
General Product Characteristics
Absolute Maximum Ratings
4
6
cycles
cycles
1)
5)
General Product CharacteristicsAbsolute Maximum Ratings
Symbol Limit Values Unit
V
V
I
I
E
E
P
T
T
V
IN
D
J
stg
D
IN
AS
AR
tot
ESD
7
Min.
–
-0.2
self limited
-2
–
0
–
0
–
–
-40
-55
-2
Max.
42
10
600
65
30
18
13
0.78
2
2
+150 °C
+150 °C
Smart Low-Side Power Switch
V
V
mA
mA
mA
mJ
mJ
mJ
mJ
W
kV
Test Conditions
2)
–
-0.2 V <
V
or
3)
I
V
T
I
V
T
I
V
T
I
V
T
4)
–
–
IN Pin
R
C
T
D
D
D
D
J(start)
J(start)
J(start)
J(start)
J
IN
bb
bb
bb
bb
V
T
T
= 1.5 k;
= 100 pF;
V
= 350 mA;
= 250 mA;
= 200 mA;
= 170 mA;
= 25 °C
j
a
IN
< -0.2 V
= 28 V;
= 28 V;
= 13.5 V;
= 13.5 V;
IN
= 25 °C
= 85 °C
= 0 V,
> 10 V
Rev. 1.0, 2007-12-06
= 85 °C
= 150 °C
= 150 °C
= 150 °C
V
IN
I
< 10 V
D
BTS3205G
= 10 mA