bts410g2 ETC-unknow, bts410g2 Datasheet - Page 7
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bts410g2
Manufacturer Part Number
bts410g2
Description
Smart Highside Power Switch Overload Protection Current Limitation Short Circuit Protection Thermal Shutdown
Manufacturer
ETC-unknow
Datasheet
1.BTS410G2.pdf
(13 pages)
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GND disconnect
V
Any kind of load. In case of Input=high is V
Due to V
GND disconnect with GND pull up
Any kind of load. If V
Due to V
V
load
Normal load current can be handled by the PROFET
itself.
Semiconductor Group
bb
bb
V
V
bb
bb
disconnect with energized inductive
V
IN
GND
GND
high
V
>0, no V
>0, no V
ST
V
IN
2
4
V
2
2
4
GND >
4
ST
ST
ST
IN
ST
IN
ST
IN
ST
= low signal available.
= low signal available.
V
IN
PROFET
PROFET
- V
PROFET
GND
GND
GND
3
1
3
1
3
1
V
IN(T+)
V
V
bb
bb
bb
V
GND
V
device stays off
GND
OUT
OUT
OUT
OUT
V
5
5
5
IN
- V
IN(T+)
.
7
V
inductive load
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R
V
=
bb
bb
high
E
disconnect with charged external
AS
E
=
bb
E
2
2
4
I
AS
L
·
·
R
IN
ST
= E
L
S
L
·
(
V
bb
IN
S T
bb
PROFET
+ E
GND
3
1
+ |V
V
bb
E
L
PROFET
L
OUT(CL)
- E
G N D
=
V
bb
1 /
R
OUT
2
= V
·
L
|)
·
I
·
5
O U T
2
L
ON(CL)
ln
L
(1+
E A S
Z L
0 :
BTS 410 G2
·
{
i
|V
L
(t) dt,
R L
OUT(CL)
L
I
L
·
R
L
E
E
|
E Load
R
)
L
D