vnn1nv04p-e STMicroelectronics, vnn1nv04p-e Datasheet - Page 7

• Manufacturer Part Number: vnn1nv04p-e
• Description: Omnifet Ii Fully Autoprotected Power Mosfet
• Manufacturer: STMicroelectronics

VNN1NV04P-E, VNS1NV04P-E
2.2
2.3
Table 4.
Off (-40 °C<Tj<150 °C, unless otherwise specified)
On (-40 °C<Tj<150 °C, unless otherwise specified)
Dynamic (T
Switching (T
Symbol
V
R
V
V
V
g
C
t
t
CLAMP
I
DS(on)
I
d(on)
d(off)
CLTH
DSS
fs
INTH
INCL
ISS
OSS
t
t
r
f
(1)
j
Drain-source clamp voltage
Drain-source clamp threshold
voltage
Input threshold voltage
Supply current from input pin
Input-source clamp
voltage
Zero input voltage drain current
(V
Static drain-source on
resistance
Forward transconductance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
=25 °C, unless otherwise specified)
Thermal data
Table 3.
1. When mounted on a standard single-sided FR4 board with 50 mm
Electrical characteristics
Electrical characteristics
j
=25 °C, unless otherwise specified)
R
R
R
IN
thj-case
thj-lead
thj-amb
=0 V)
Symbol
to all DRAIN pins
Parameter
Thermal data
Thermal resistance junction-case
Thermal resistance junction-lead
Thermal resistance junction-ambient
V
V
V
V
I
I
V
V
V
V
V
V
V
V
(see
IN
IN
IN
IN
DS
DS
DS
DS
IN
IN
DD
DS
DD
gen
Doc ID 15586 Rev 2
=1 mA
=-1 mA
=0 V; I
=0 V; I
=5 V; I
=5 V; I
=V
=0 V; V
=13 V; V
=25 V; V
=13 V; f=1 MHz; V
=13 V; I
=15 V; I
=5 V; R
Parameter
Figure
IN
Test conditions
; I
D
D
D
D
D
=0.5 A
=2 mA
=0.5 A; T
=0.5 A
IN
=1 mA
D
D
gen
4)
IN
IN
=5 V
=0.5 A
=0.5 A
=0 V; T
=0 V
=R
IN MIN
j
=25 °C
j
=25 °C
IN
=330 Ω
=0 V
2
of Cu (at least 35 μm thick) connected
Min
-1.0
0.5
40
36
SOT-223
6
70
Electrical specifications
18
(1)
Max value
Typ
100
170
350
200
6.8
45
90
70
2
SO-8
65
15
1000
Max
(1)
-0.3
150
250
500
200
500
600
2.5
55
30
75
8
°C/W
°C/W
°C/W
Unit
Unit
mΩ
µA
µA
pF
ns
ns
ns
ns
V
V
V
V
S
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