vnq5e250ajtr-e STMicroelectronics, vnq5e250ajtr-e Datasheet - Page 24

• Manufacturer Part Number: vnq5e250ajtr-e
• Description: Quad Channel High-side Driver With Analog Current Sense For Automotive Applications
• Manufacturer: STMicroelectronics

Application information
3
Note:
3.1
3.1.1
24/37
Application information
Figure 32. Application schematic
Channel 2, 3, 4 have the same internal circuit as channel 1.
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power Dissipation in R
P
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
values. This shift varies depending on how many devices are ON in the case of several high
side drivers sharing the same R
D
GND
= (-V
R
R
produces a shift (I
ΜCU
+5V
GND
GND
CC
GND
)
≤ 600mV / (I
≥ (−V
2
/R
is the DC reverse ground pin current and can be found in the absolute
GND
CC
C
ext
R
R
) / (-I
R
prot
prot
prot
GND
S(on)max
GND
S(on)max
(when V
)
R
SENSE
Doc ID 17360 Rev 2
CURRENT SENSE
).
CS_DIS
IINPUT
GND
* R
CC
GND
.
<0: during reverse battery situations) is:
) in the input thresholds and the status output
V
GND
GND
R
GND
GND
GND
S(on)max
only)
V
CC
resistor.
D
GND
becomes the sum of the
OUTPUT
VNQ5E250AJ-E
D
ld