vn0540 Supertex, Inc., vn0540 Datasheet

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vn0540

Manufacturer Part Number
vn0540
Description
N-channel Enhancement-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet
† MIL visual screening available
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
Ordering Information
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
BV
BV
400V
ISS
DSS
DGS
and fast switching speeds
/
R
(max)
DS(ON)
35
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55 C to +150 C
250mA
BV
BV
300 C
(min)
I
D(ON)
20V
DSS
DGS
7-161
Package Options
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
VN0540N3
TO-92
Order Number / Package
VN0540ND
TO-92
S G D
Die
VN0540
7

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vn0540 Summary of contents

Page 1

... Package Options BV DSS BV DGS 20V - +150 C 300 C Note: See Package Outline section for dimensions. 7-161 VN0540 † Die VN0540ND TO-92 7 ...

Page 2

... V = 10V 25V 5V 20mA 10V 0. 10V 0. 25V 0. 0V 25V MHz V = 25V 250mA GEN PULSE R gen INPUT VN0540 I DRM 400mA OUTPUT D.U.T. ...

Page 3

... 125 C A 0.4 0.5 1.0 0.8 0.6 0.4 0.2 100 1000 7-163 Saturation Characteristics V = 10V (volts) DS Power Dissipation vs. Case Temperature TO- 100 125 Thermal Response Characteristics TO- 1. 0.001 0.01 0 (seconds) p VN0540 150 10 ...

Page 4

... C ISS 7-164 On-Resistance vs. Drain Current 10V GS 0.1 0.2 0.3 0.4 I (amperes and R Variation with Temperature (th 10V, 0.1A DS(ON 1mA (th 100 Gate Drive Dynamic Characteristics V = 10V DS 40V 112 0.6 0.2 0.4 0.8 Q (nanocoulombs) G VN0540 0.5 1.8 1.4 1.0 0.6 0.2 150 1.0 ...

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