ncv8460dr2g ON Semiconductor, ncv8460dr2g Datasheet - Page 13

• Manufacturer Part Number: ncv8460dr2g
• Description: Self Protected High Side Driver With Temperature Shutdown And Current Limit
• Manufacturer: ON Semiconductor

Reverse Battery Protection
protect the device from a Reverse Battery event. The resistor
value can be calculated using the following two formulas.
current, can be found in the Maximum Ratings section.
Several High Side Devices can share same the reverse
battery protection resistor. Please note that the sum of (I
(on) max) of all devices should be used to calculate R
value. If the microprocessor ground is not common with the
device ground, R
max) x R
An external resistor R
Maximum (-I
1. R
2. R
GND
GND
GND
≥ 600 mV / (I
≥ (-V
)
5 V
gnd)
with respect to the IN and STAT pins.
GND
Reverse Battery
D
current, which is the reverse GND pin
) / (-I
will produce a voltage offset ((I
Protection
GND
gnd
d
)
(on) max)
is required to adequately
STAT
Input
R
Figure 31. Application Diagram
GND
GND
http://onsemi.com
d
GND
(on)
d
13
D
GND
shares the resistor.
to:
devices sharing R
D
protection method. When driving an inductive load, a 1 kW
resistor should be placed in parallel with the D
This method will also produce a voltage offset of ~600 mV
with respect to the IN and STAT pins. This diode can also be
shared amongst several High Side Devices. This voltage
offset will vary if D
GND
This offset will be increased when more than one device
Power Dissipation during a reverse battery event is equal
In the case of high power dissipation due to several
V
in the ground path as an alternate reverse battery
D
V
out
P
GND
D
GND
+
+ * V
, it is recommended to place a diode
−
is shared by multiple devices.
D
2
R
GND
Load
GND
diode.