btn7960 Infineon Technologies Corporation, btn7960 Datasheet - Page 6

• Manufacturer Part Number: btn7960
• Description: High Current Pn Half Bridge Novalithic?
• Manufacturer: Infineon Technologies Corporation

4
4.1
Absolute Maximum Ratings
T
(unless otherwise specified)
Pos.
Voltages
4.1.1
4.1.2
4.1.3
4.1.4
4.1.5
Currents
4.1.6
4.1.7
4.1.8
Temperatures
4.1.9
4.1.10
ESD Susceptibility
4.1.11
1) Not subject to production test, specified by design
2) Maximum reachable current may be smaller depending on current limitation level
3) ESD susceptibility, HBM according to EIA/JESD22-A114-B (1.5 kΩ, 100 pF)
Data Sheet
j
= -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
Parameter
Supply Voltage
Logic Input Voltage
Voltage at SR Pin
Voltage between VS and IS Pin
Voltage at IS Pin
HS/LS Continuous Drain Current
HS/LS Pulsed Drain Current
HS/LS PWM Current
Junction Temperature
Storage Temperature
ESD Susceptibility HBM
IN, INH, SR, IS
OUT, GND, VS
General Product Characteristics
Absolute Maximum Ratings
1)
2)
2)
2)
Symbol
V
V
V
V
V
V
I
I
I
I
I
I
T
T
V
D(HS)
D(LS)
D(HS)
D(LS)
D(HS)
D(LS)
j
stg
S
IN
INH
SR
S
IS
ESD
-
V
IS
6
Min.
-0.3
-0.3
-0.3
-0.3
-20
-44
-40
-90
-85
-55
-50
-60
-54
-40
-55
-2
-6
Limit Values
Max.
45
5.3
1.0
45
45
44
40
90
85
55
50
60
54
150
150
2
6
High Current PN Half Bridge
General Product Characteristics
V
V
V
V
V
A
A
A
A
A
A
A
A
°C
°C
kV
Unit
Conditions
–
–
–
–
–
T
switch active
T
switch active
T
t
single pulse
T
t
single pulse
T
f = 1kHz, DC = 50%
T
f = 1kHz, DC = 50%
T
f = 20kHz, DC = 50%
T
f = 20kHz, DC = 50%
–
–
HBM
pulse
pulse
Rev. 1.1, 2007-11-21
C
C
C
C
C
C
C
C
< 85°C
< 125°C
< 85°C
< 125°C
< 85°C
< 125°C
< 85°C
< 125°C
= 10ms
= 10ms
3)
BTN7960