fdms869007 Fairchild Semiconductor, fdms869007 Datasheet - Page 4

• Manufacturer Part Number: fdms869007
• Description: N-channel Power Trench Mosfet 9.0m
• Manufacturer: Fairchild Semiconductor

FDMS8690 Rev.C2
Typical Characteristics
0.01
200
100
0.1
10
50
10
10
Figure 7.
1
1
1E-3
8
6
4
2
0
0.1
0
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
Figure 9.
Figure 11. Forward Bias Safe
I
D
= 14A
0.01
V
Switching Capability
DS
Gate Charge Characteristics
t
, DRAIN-SOURCE VOLTAGE (V)
AV
DS(on)
Operating Area
5
Unclamped Inductive
, TIME IN AVALANCHE(ms)
Q
g
1
,GATE CHARGE (nC)
0.1
SINGLE PULSE
T
T
J
A
=
=
T
MAX RATED
25
J
10
V
= 125
o
DD
C
1
T
= 10V
J
o
T
C
= 25°C unless otherwise noted
V
J
10
DD
= 25
= 20V
10
o
15
C
T
J
V
= 100
DD
10ms
100us
100ms
1s
1ms
DC
= 15V
100
o
C
100
300
20
4
1000
4000
2000
1000
100
100
10
0.5
15
12
10
Figure 10.
9
6
3
0
1
0.1
10
25
Figure 12.
Current vs Ambient Temperature
-4
Figure 8.
SINGLE PULSE
R
f = 1MHz
V
10
θ
V
GS
JA
T
DS
V
A
-3
50
GS
= 0V
, DRAIN TO SOURCE VOLTAGE (V)
= 50
, AMBIENT TEMPERATURE
Power Dissipation
Maximum Continuous Drain
to Source Voltage
= 10V
t, PULSE WIDTH (s)
o
10
Single Pulse Maximum
Capacitance vs Drain
C/W
-2
75
1
10
-1
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
V
V
GS
GS
10
100
25
0
= 10V
C
= 4.5V
C
C
ISS
RSS
OSS
o
C DERATE PEAK
150 T
---------------------- -
10
( o
125
1
–
C
125
10
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)
A
T
A
10
= 25
2
o
C
150
30
10
3