bd6222 ROHM Co. Ltd., bd6222 Datasheet - Page 14

• Manufacturer Part Number: bd6222
• Description: H-bridge Drivers For Brush Motors
• Manufacturer: ROHM Co. Ltd.

 Ordering part number
○
BD6220, BD6221, BD6222, BD6225, BD6226, BD6227
c
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2009 ROHM Co., Ltd. All rights reserved.
10) Capacitor between output and GND
11) Testing on application boards
12) Switching noise
13) Regarding the input pin of the IC
9) Built-in thermal shutdown (TSD) circuit
The TSD circuit is designed only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or
guarantee its operation in the presence of extreme heat. Do not continue to use the IC after the TSD circuit is activated,
and do not operate the IC in an environment where activation of the circuit is assumed.
In the event a large capacitor is connected between the output and GND, if VCC and VIN are short-circuited with 0V or
GND for any reason, the current charged in the capacitor flows into the output and may destroy the IC. Use a capacitor
smaller than 1μF between output and GND.
When testing the IC on an application board, connecting a capacitor to a low impedance pin subjects the IC to stress.
Therefore, always discharge capacitors after each process or step. Always turn the IC's power supply off before
connecting it to or removing it from the test setup during the inspection process. Ground the IC during assembly steps
as an antistatic measure. Use similar precaution when transporting or storing the IC.
When the operation mode is in PWM control or VREF control, PWM switching noise may effects to the control input
pins and cause IC malfunctions. In this case, insert a pulled down resistor (10kΩ is recommended) between each
control input pin and ground.
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by
which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin.
ROHM part
number
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic element
B
Pin A
N
P
+
D
N
Type
1X: 7V max.
2X: 18V max.
3X: 36V max.
X0: 1ch/0.5A X5:
2ch/0.5A
X1: 1ch/1A
X2: 1ch/2A
GND
6
P
P substrate
P
+
2
Resistor
N
X6: 2ch/1A
X7: 2ch/2A
Pin A
2
Appendix: Example of monolithic IC structure
0
Parasitic
element
Package
F: SOP8
FP: HSOP25
FM: HSOP-M28
HFP: HRP7
14/15
F
Parasitic element
Pin B
N
P
+
C
-
B
N
E
GND
P
Transistor (NPN)
P substrate
Packaging spec.
E2: Embossed taping
TR: Embossed taping
E
P
+
N
(SOP8/HSOP25/HSOP-M28)
(HRP7)
GND
2
Other adjacent elements
Pin B
B
Technical Note
2009.04 - Rev.B
C
E
GND
Parasitic
element