vnh3sp30 STMicroelectronics, vnh3sp30 Datasheet - Page 8

• Manufacturer Part Number: vnh3sp30
• Description: Fully Integrated H-bridge Motor Driver
• Manufacturer: STMicroelectronics

REVERSE BATTERY PROTECTION
Three possible solutions can be thought of:
a) a Schottky diode D connected to V
b) a N-channel MOSFET connected to the GND pin (see Typical Application Circuit on page 7)
c) a P-channel MOSFET connected to the V
The device sustains no more than -30A in reverse battery conditions because of the two Body diodes of
the Power MOSFETs. Additionally, in reverse battery condition the I/Os of VNH2SP30 will be pulled down
to the V
microcontroller I/Os. If I
OPEN LOAD DETECTION IN OFF-MODE
It is possible for the microcontroller to detect an open load condition by adding a simply resistor (for
example 10k ) between one of the outputs of the bridge (for example OUT
input. A possible sequence of inputs and enable signals is the following: IN
-
-
SHORT CIRCUIT PROTECTION
In case of a fault condition the DIAG
The fault conditions are:
- overtemperature on one or both high sides;
- short to battery condition on the output (saturation detection on the Low-Side Power MOSFET).
Possible origins of fault conditions may be:
OUT
OUT
When a fault condition is detected, the user can know which power element is in fault by monitoring the
IN
In any case, when a fault is detected, the faulty half bridge is latched off. To turn-on the respective output
(OUT
(1) An internal operational amplifier compares the Drain-Source MOSFET voltage with the internal reference (2.7V Typ.).
TRUTH TABLE IN FAULT CONDITIONS (detected on OUT
A
The relevant Lowside PowerMOS is switched off when its Drain-Source voltage exceeds the reference voltage.
, IN
GND. This condition is detected on OUT
normal condition: OUT
open load condition: OUT
A
A
X
is shorted to ground ---> overtemperature detection on high side A.
is shorted to V
) again, the input signal must rise from low to high level.
B
CC
, DIAG
line (approximately -1.5V). Series resistor must be inserted to limit the current sunk from the
A
/EN
IN
1
1
0
0
X
X
X
A
A
CC
and DIAG
Rmax
---> Low-Side Power MOSFET saturation detection.
IN
X
A
1
0
1
0
1
0
B
=H and OUT
is the maximum target reverse current through C I/Os, series resistor is:
A
=H and OUT
B
/EN
DIAG
X
B
CC
/EN
Fault Information
0
0
0
0
0
0
0
pins.
A
/EN
B
pin
X
=H
pin is considered as an output pin by the device.
A
R
CC
B
B
=
=L: in this case the OUT
pin by the microcontroller as an open load fault.
pin
V
------------------------------ -
DIAG
IOs
I
Rm ax
–
1
1
1
1
0
1
1
B
V
/EN
CC
B
A
)
OPEN
OPEN
OPEN
OPEN
OPEN
OPEN
OPEN
OUT
Protection Action
A
B
pin is internally pulled down to
A
=1, IN
(1)
B
) and one microcontroller
OPEN
OPEN
OUT
H
H
H
B
L
L
=X, EN
B
A
VNH3SP30
= 1, EN
B
8/26
=0.