fdc640p-nf073 Fairchild Semiconductor, fdc640p-nf073 Datasheet - Page 4

• Manufacturer Part Number: fdc640p-nf073
• Description: Fdc640p P-channel 2.5v Powertrench? Specified Mosfet
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
Figure 7. Gate Charge Characteristics.
I
0.1
D
0.001
0.01
= -4.5A
R
0.1
SINGLE PULSE
R
0.00001
DS(ON)
1
V
JA
T
GS
A
= 156
2
= 25
LIMIT
= -4.5V
D = 0.5
o
o
C
C/W
0.2
-V
0.1
DS
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
4
Q
g
1
0.01
, GATE CHARGE (nC)
0.0001
DC
SINGLE PULSE
10s
6
1s
V
Figure 11. Transient Thermal Response Curve.
DS
100ms
= -5V
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
10ms
0.001
8
10
1ms
-15V
100 s
10
-10V
0.01
100
12
t
1
, TIME (sec)
0.1
1200
1000
5
4
3
2
1
0
800
600
400
200
0.1
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
1
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
ISS
OSS
RSS
t
1
, TIME (sec)
10
10
10
P(pk)
Duty Cycle, D = t
T
R
J
R
SINGLE PULSE
R
JA
- T
100
JA
(t) = r(t) + R
JA
T
100
A
15
A
t
= 156°C/W
= 156°C/W
1
= P * R
= 25°C
t
2
FDC640P Rev E(W)
V
f = 1MHz
GS
= 0 V
JA
1
JA
(t)
/ t
1000
2
20
1000