cat808ntfi-35 Catalyst Semiconductor, cat808ntfi-35 Datasheet - Page 2
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cat808ntfi-35
Manufacturer Part Number
cat808ntfi-35
Description
Low-power Precision Voltage Detector
Manufacturer
Catalyst Semiconductor
Datasheet
1.CAT808NTFI-35.pdf
(8 pages)
CAT808
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
T
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
(2) The Minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20ns. Maximum DC
(3) Latch-up protection is provided for stresses up to 100mA on all pins from -1V to V
(4) The temperature change ratio in the detection voltage [ppm/°C] is calculated by using the following equation:
Doc. No. 3024 Rev. B
ΔT
Parameters
Temperature under Bias
Storage Temperature
Voltage on any Pin with Respect to GND
V
Lead Soldering temperature (10 seconds)
Power Dissipation
Parameters
V
Operating Temperature Range
A
DD
DD
Δ - V
= -40ºC to +85ºC, V
Symbol
T
only and functional operation of the devices at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and
reliability.
voltage on output pins is V
A
Δ
V
I
I
PHL/LH
with Respect to GND
LEAK
I
● -V
OUT
T
Δ
DET
DD
A
−
•
DET
V
V -
DET
DET
DET
×
Parameter
Detection Voltage
Current Consumption
Output SinkCurrent
Output Leakage Current
Response Time
Detection Voltage
Temperature Coefficient
, 1
000
,
000
TSOT-23-5
SOT-89
DD
[
ppm
CC
= 1.2V to 6.0V
+0.5V, which may overshoot to V
/º
] C
(1)
(4)
(2)(3)
Conditions
CAT808Nxxx-27
CAT808Nxxx-32
CAT808Nxxx-35
V
V
V
V
V
–
DD
DD
DD
DS
DS
= 4.0V
= 5.0V
= 6.0V
= 0.5V
= 5.0V, V
CC
+2.0V for periods of less than 20ns.
2
DD
= 5.0V
V
V
DD
DD
=1.2V
=2.4V
CC
+1V.
-2.0 to V
+1.2 to +6.0
-55 to +125
-65 to +150
-2.0 to 7.0
-40 to +85
Ratings
Ratings
+300
250
500
Characteristics subject to change without notice
DD
2.62
3.12
3.42
Min Typ. Max
0.6
2.9
+ 2.0
-
-
-
-
-
-
© 2007 Catalyst Semiconductor, Inc.
±10 ±100 ppm/ºC
2.7 2.78
3.2 3.28
3.5 3.58
2.4
3.5
1.4
5
5
-
-
10
60
5
7
1
-
-
Units
Units
mW
mW
ºC
ºC
ºC
ºC
V
V
V
Units
mA
µA
µA
µs
V