rf601b2d ROHM Co. Ltd., rf601b2d Datasheet

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rf601b2d

Manufacturer Part Number
rf601b2d
Description
Fast Recovery Diodes Silicon Epitaxial Planar
Manufacturer
ROHM Co. Ltd.
Datasheet

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Part Number
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Part Number:
RF601B2D
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
RF601B2D
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Fast recovery diodes
RF601B2D
General rectification
1) Power mold type. (CPD)
2) Ultra Low V
3) Very fast recovery
4) Low switching loss
Silicon epitaxial planer
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
(*1) Business frequencies, Rating of R-load, Tc=128℃, 1/2 Io per diode
Forward voltage
Reverse current
Reverse recovery time
Thermal impedance
Features
Construction
Electrical characteristic (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Parameter
F
Parameter
Symbol
θjc
trr
V
I
R
F
6.8±0.1
Dimensions (Unit : mm)
JEITA : SC-63
ROHM : CPD
Taping dimensions (Unit : mm)
4.0±0.1
Min.
C0.5
-
-
-
-
Symbol
(1)
2.0±0.05
TL
Tstg
V
I
Manufacture Date
2.3±0.2
V
FSM
Io
Tj
RM
0.9
(2) (3)
R
6.5±0.2
5.1±0.2
    0.1
Typ.
0.87
0.01
2.3±0.2
14
-
8.0±0.1
8.0±0.1
0.65±0.1
0.75
Max.
0.93
6.0
10
25
2.3±0.2
    0.1
-55 to +150
Limits
200
200
150
0.5±0.1
40
0.5±0.1
1.0±0.2
6
℃/W
Unit
µA
ns
V
φ1.55±0.1
      0
φ3.0±0.1
I
V
I
JUNCTION TO CASE
F
F
=0.5A,I
R
=3A
Land size figure (Unit : mm)
=200V
Structure
Unit
Conditions
V
V
A
A
R
=1A,Irr=0.25*I
Rev.E
CPD
RF601B2D
1.6
2.3
6.0
2.3
0.4±0.1
1.6
R
2.7±0.2
1/3

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rf601b2d Summary of contents

Page 1

... RM V 200 FSM 150 Tj -55 to +150 Tstg Min. Typ. Max. - 0. 6.0 RF601B2D Land size figure (Unit : mm) 6.0 0.5±0.1 1.6 2.3 CPD 0.5±0.1 1.0±0.2 Structure φ1.55±0.1       0 φ3.0±0.1 Unit ℃ ℃ Conditions Unit I = ...

Page 2

... DISPERSION MAP 100 Mounted on a epoxy board Rth(j-a) 10 Rth(j-c) IM=100mA IF=3A 1 time 1ms 300us 0.1 100 0.001 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS RF601B2D 100 f=1MHz 200 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 150 Ta=25℃ 140 f=1MHz 130 VR=0V n=10pcs 120 110 100 90 AVE:99 ...

Page 3

... Derating Curve゙(Io-Ta D=t/T VR=100V DC 10 Tj=150℃ T D=1/2 5 Sin(θ=180 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) RF601B2D break at 30kV No break at 30kV C=200pF C=100pF 150 R=0Ω R=1.5kΩ ESD DISPERSION MAP Rev.E 3/3 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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